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Thermal Activation of Valley-Orbit States of Neutral Magnesium in Silicon

Abraham, R. J. S. and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Astrov, Yu. A. and Abrosimov, N. V. and Pavlov, Sergey and Hübers, Heinz-Wilhelm and Simmons, S. and Thewalt, M. L. W. (2022) Thermal Activation of Valley-Orbit States of Neutral Magnesium in Silicon. Semiconductors, 56 (1), pp. 59-62. Springer. doi: 10.21883/SC.2022.01.53120.9583A. ISSN 1090-6479.

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Official URL: https://journals.ioffe.ru/articles/53120

Abstract

Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of the chalcogen double donors, parameters of the even-parity valley-orbit excited states 1s(T_2) and 1s(E) have remained elusive. Here we report on further study of these states in neutral magnesium through temperature dependence absorption measurements. The results demonstrate thermal activation from the ground state 1s(A_1) to the valley-orbit states, as observed by transitions from the thermally populated levels to the odd-parity states 2p_0 and 2p_±. Analysis of the data makes it possible to determine the thermal activation energies of transitions from the donor ground state to 1s(T_2) and 1s(E) levels, as well as the binding energies of an electron with the valley-orbit excited states. Keywords: magnesium impurity in silicon, deep center, optical spectroscopy.

Item URL in elib:https://elib.dlr.de/190361/
Document Type:Article
Title:Thermal Activation of Valley-Orbit States of Neutral Magnesium in Silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Abraham, R. J. S.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIEDUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Portsel, L. M.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Lodygin, A. N.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Astrov, Yu. A.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Simmons, S.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIEDUNSPECIFIED
Thewalt, M. L. W.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIEDUNSPECIFIED
Date:January 2022
Journal or Publication Title:Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:56
DOI:10.21883/SC.2022.01.53120.9583A
Page Range:pp. 59-62
Publisher:Springer
ISSN:1090-6479
Status:Published
Keywords:valley-orbit interaction, silicon, double donors
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:21 Nov 2022 12:59
Last Modified:29 Nov 2022 12:46

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