Microstructural Properties of THz Schottky Mixer Diodes

Hübers, H.-W. and Röser, H.P. (1998) Microstructural Properties of THz Schottky Mixer Diodes. In: Proc. of the 23rd Intern. Conf. on Infrared and Millimeter Waves, Colchester, Sept. 1998, pp. 92-93. 23rd Intern. Conf. on Infrared and Millimeter Waves. ISBN 0953383903.

Full text not available from this repository.

Item URL in elib:

https://elib.dlr.de/17804/

Document Type:

Conference or Workshop Item (Paper)

Additional Information:

LIDO-Berichtsjahr=1999,

Title:

Microstructural Properties of THz Schottky Mixer Diodes

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Hübers, H.-W.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Röser, H.P.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED

Date:

1998

Journal or Publication Title:

Proc. of the 23rd Intern. Conf. on Infrared and Millimeter Waves, Colchester, Sept. 1998

Open Access:

Gold Open Access:

In SCOPUS:

In ISI Web of Science:

Page Range:

pp. 92-93

ISBN:

0953383903

Status:

Published

Keywords:

Schottky diode, potential barrier, fermi level, pinning, terahertz, mixeer, metal-semiconductor contact, barrier inhomogeneities

Event Title:

23rd Intern. Conf. on Infrared and Millimeter Waves

HGF - Research field:

Aeronautics, Space and Transport (old)

HGF - Program:

Space (old)

HGF - Program Themes:

W EO - Erdbeobachtung

DLR - Research area:

Space

DLR - Program:

W EO - Erdbeobachtung

DLR - Research theme (Project):

UNSPECIFIED

Location:

Berlin-Adlershof

Institutes and Institutions:

Institut für Weltraumsensorik und Planetenerkundung

Deposited By:

DLR-Beauftragter, elib

Deposited On:

16 Sep 2005

Last Modified:

14 Jan 2010 18:18

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