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Temperature Dependence of the Barrier Height of Pt/n-GaAs Schottky Diodes

Hübers, H.-W. and Röser, H.P. (1998) Temperature Dependence of the Barrier Height of Pt/n-GaAs Schottky Diodes. J. Appl. Phys., 84, pp. 5326-5330.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/17801/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Temperature Dependence of the Barrier Height of Pt/n-GaAs Schottky Diodes
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Röser, H.P.UNSPECIFIEDUNSPECIFIED
Date:1998
Journal or Publication Title:J. Appl. Phys.
Refereed publication:No
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:84
Page Range:pp. 5326-5330
Status:Published
Keywords:Schottky diode, potential barrier, fermi level, pinning, terahertz, mixer, metal-semiconductor contact
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EO - Erdbeobachtung
DLR - Research area:Space
DLR - Program:W EO - Erdbeobachtung
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 18:18

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