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Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon

Pavlov, Sergey and Portsel, L. M. and Shuman, V. B. and Lodygin, A. N. and Astrov, Yu. A. and Abrosimov, N. V. and Lynch, S. A. and Tsyplenkov, V. V. and Hübers, Heinz-Wilhelm (2021) Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon. Physical Review Materials, 5, p. 114607. American Physical Society. doi: 10.1103/PhysRevMaterials.5.114607. ISSN 2475-9953.

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Official URL: https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.5.114607

Abstract

Infrared absorption cross sections and corresponding oscillator strengths of several intracenter transitions of double donors in silicon, interstitial magnesium (Mg; group IIA) and substitutional chalcogens (Ch = S; Se; group VI), were determined for impurity densities in the ranges 1 × e14–1.6e15 atoms/cm3 for Mg and 2e13–2e16 atoms/cm3 for chalcogens. The concentrations of electrically active atomic and diatomic donor centers were derived from the Hall effect measurements. The experimental integrated cross sections were obtained from low-temperature impurity absorption spectra. The oscillator strengths of related donor transitions were derived and compared with those for shallow single donors in silicon, both determined experimentally and predicted theoretically. The transitions of oscillator strengths of double donors follow the decreasing trend with decreasing radius of donor ground states and increasing an impurity binding energy.

Item URL in elib:https://elib.dlr.de/146605/
Document Type:Article
Title:Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Portsel, L. M.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Lodygin, A. N.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Astrov, Yu. A.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Lynch, S. A.Cardiff University, CardiffUNSPECIFIEDUNSPECIFIED
Tsyplenkov, V. V.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:29 November 2021
Journal or Publication Title:Physical Review Materials
Refereed publication:Yes
Open Access:Yes
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:5
DOI:10.1103/PhysRevMaterials.5.114607
Page Range:p. 114607
Publisher:American Physical Society
ISSN:2475-9953
Status:Published
Keywords:oscillator strengths, double donors, silicon
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:02 Dec 2021 10:18
Last Modified:05 Dec 2023 08:20

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