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Resonant boron acceptor states in semiconducting diamond

Pavlov, Sergey and Prikhodko, D. D. and Tarelkin, S. A. and Bormashov, V. S. and Abrosimov, N. V. and Kuznetsov, M. S. and Terentiev, S. A. and Nosukhin, S. A. and Troschiev, S. Yu. and Blank, V. D. and Hübers, Heinz-Wilhelm (2021) Resonant boron acceptor states in semiconducting diamond. Physical Review B, 104, p. 155201. American Physical Society. doi: 10.1103/PhysRevB.104.155201. ISSN 2469-9950.

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Official URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.155201

Abstract

High-excited discrete states of boron hydrogenlike acceptors in crystalline diamond have been measured by temperature-dependent infrared absorption spectroscopy. We distinguish the boron resonant states in diamond crystals from the localized boron states in the band gap by differentiating the impurity transitions within state continua of the valence light- and heavy-hole subbands on the basis of their relative oscillator strengths, specific selection rules, and temperature dependences. Constraints on the boron binding energy and spin-orbit splitting of the valence band have been derived by analysis of the structure of the infrared absorption spectra of boron-doped diamond, in particular by a comparison with boron spectra in other semiconductors with a diamond lattice

Item URL in elib:https://elib.dlr.de/144559/
Document Type:Article
Title:Resonant boron acceptor states in semiconducting diamond
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Prikhodko, D. D.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Tarelkin, S. A.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Bormashov, V. S.The All-Russian Research Institute for Optical and Physical Measurements, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.leibniz-institut für kristallzüchtung (ikz), berlinUNSPECIFIEDUNSPECIFIED
Kuznetsov, M. S.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Terentiev, S. A.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Nosukhin, S. A.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Troschiev, S. Yu.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Blank, V. D.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:10 October 2021
Journal or Publication Title:Physical Review B
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:104
DOI:10.1103/PhysRevB.104.155201
Page Range:p. 155201
Publisher:American Physical Society
ISSN:2469-9950
Status:Published
Keywords:semiconducting diamond, resonant impurity state
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:19 Oct 2021 10:04
Last Modified:24 Oct 2023 12:51

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