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Features of Photothermal Ionization in Photoconducting Spectra of MidInfrared Silicon Detectors Doped by Deep Selenium Double Donors

Pohl, Andreas and Pavlov, Sergey and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Astrov, Yu. A. and Hübers, Heinz-Wilhelm (2020) Features of Photothermal Ionization in Photoconducting Spectra of MidInfrared Silicon Detectors Doped by Deep Selenium Double Donors. In: 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020, 09370468. IEEE. 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2020-11-08 - 2020-11-13, Buffalo, NY, USA. doi: 10.1109/IRMMW-THz46771.2020.9370468. ISBN 978-172816620-9. ISSN 2162-2027.

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Official URL: https://ieeexplore.ieee.org/document/9370468

Abstract

Diatomic centers of double donor doped silicon have lower chemical shifts as compared to the corresponding atomic impurity and by this essentially extend spectral sensitivity of silicon extrinsic infrared detectors towards longer wavelengths. Additional expansion of the detector spectral band, up to the effective-mass approximated theoretical value of about 2.7 THz, can be obtained by photothermal infrared absorption originated from intracenter transitions of a dopant. Due to large energy gaps between lowest excited states of double donors in silicon related photothermal transitions have not been considered yet as applicable for photoconductive light detection. We have investigated the operational conditions suitable for expanding the low temperature detection wavelength cut-off of selenium doped silicon infrared detectors towards 6.2 µm.

Item URL in elib:https://elib.dlr.de/142123/
Document Type:Conference or Workshop Item (Speech)
Title:Features of Photothermal Ionization in Photoconducting Spectra of MidInfrared Silicon Detectors Doped by Deep Selenium Double Donors
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pohl, AndreasUNSPECIFIEDhttps://orcid.org/0009-0005-5091-6476UNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Portsel, L. M.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIEDUNSPECIFIED
Lodygin, A. N.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIEDUNSPECIFIED
Astrov, Yu. A.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:2020
Journal or Publication Title:45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI:10.1109/IRMMW-THz46771.2020.9370468
Page Range:09370468
Publisher:IEEE
ISSN:2162-2027
ISBN:978-172816620-9
Status:Published
Keywords:Silicon, Infrare Detector
Event Title:2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Event Location:Buffalo, NY, USA
Event Type:international Conference
Event Start Date:8 November 2020
Event End Date:13 November 2020
Organizer:IEEE
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:04 May 2021 09:49
Last Modified:24 Apr 2024 20:42

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