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Highly efficient THz four-wave mixing in doped silicon

Deßmann, N. and Le, Nguyen H. and Eless, V. and Chick, S. and Saeedi, K. and Perez-Delgado, A. and Pavlov, Sergey and van der Meer, A. F. G. and Litvinenko, K. L. and Galbraith, I. and Abrosimov, N. V. and Riemann, H. and Pidgeon, C. R. and Aeppli, G. and Redlich, B. and Murdin, B. N. (2021) Highly efficient THz four-wave mixing in doped silicon. Light: Science and Applications (10), p. 71. Springer. doi: 10.1038/s41377-021-00509-6. ISSN 2047-7538.

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Official URL: https://www.nature.com/articles/s41377-021-00509-6

Abstract

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

Item URL in elib:https://elib.dlr.de/141851/
Document Type:Article
Title:Highly efficient THz four-wave mixing in doped silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Deßmann, N.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Le, Nguyen H.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIEDUNSPECIFIED
Eless, V.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Chick, S.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIEDUNSPECIFIED
Saeedi, K.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Perez-Delgado, A.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIEDUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
van der Meer, A. F. G.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Litvinenko, K. L.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIEDUNSPECIFIED
Galbraith, I.Institute of Photonics and Quantum Sciences, SUPAUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Riemann, H.Institut für Kristallzüchtung, BerlinUNSPECIFIEDUNSPECIFIED
Pidgeon, C. R.Institute of Photonics and Quantum Sciences, SUPA, Edingourgh, UKUNSPECIFIEDUNSPECIFIED
Aeppli, G.Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, SwitzerlandUNSPECIFIEDUNSPECIFIED
Redlich, B.FELIX Facility, Radboud University, The NetherlandsUNSPECIFIEDUNSPECIFIED
Murdin, B. N.Advanced Technology Institute, University of Surrey, Guildford, UKUNSPECIFIEDUNSPECIFIED
Date:1 April 2021
Journal or Publication Title:Light: Science and Applications
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI:10.1038/s41377-021-00509-6
Page Range:p. 71
Publisher:Springer
Series Name:Springer Nature
ISSN:2047-7538
Status:Published
Keywords:Third-order non-linearities, Silicon, Susceptibility
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:19 Apr 2021 11:53
Last Modified:05 Dec 2023 07:43

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