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Magnesium-related shallow donor centers in silicon

Pavlov, Sergey and Astrov, Yu. A. and Portsel, L. M. and Shuman, V. B. and Lodygin, A. N. and Abrosimov, N. V. and Hübers, Heinz-Wilhelm (2021) Magnesium-related shallow donor centers in silicon. Materials Science in Semiconductor Processing, 130, p. 105833. Elsevier. doi: 10.1016/j.mssp.2021.105833. ISSN 1369-8001.

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Official URL: https://www.sciencedirect.com/science/article/abs/pii/S1369800121001700?via%3Dihub


Magnesium (Mg) atoms, diffused in silicon (Si) lattice at high temperatures, tend to form specific bonds to host Si atoms, to other Mg atoms as well as to other defects in a Si crystal. These electrically active donors exist either as isolated atomic type centers or as complexes coupling magnesium to other trace elements in silicon. We report on shallow Mg-related donor centers in moderately doped Si:Mg crystals which are distinguished by their infrared absorption spectra. These complexes have energy spectra, relatively dense filling two separated infrared ranges, 30–95 meV and 105–130 meV, having clearly different genesis. These centers are observed in silicon of various purification degree, including high-purity crystals with low oxygen and carbon content. We assign the formation of such localized states in Si:Mg to electrically active donor complexes with different numbers of magnesium atoms, similar to those formed by interstitial oxygen in silicon. The results obtained are incorporated into the general phenomenon of formation of shallow donors in silicon which is related to interaction of impurities in the semiconductor

Item URL in elib:https://elib.dlr.de/141850/
Document Type:Article
Title:Magnesium-related shallow donor centers in silicon
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Astrov, Yu. A.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Portsel, L. M.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Lodygin, A. N.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Date:30 March 2021
Journal or Publication Title:Materials Science in Semiconductor Processing
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In ISI Web of Science:Yes
Page Range:p. 105833
Keywords:Silicon, Mg complexes
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:26 Apr 2021 06:08
Last Modified:20 Oct 2023 08:00

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