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Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation

Zhukavin, R. Kh. and Pavlov, Sergey and Pohl, Andreas and Abrosimov, N. V. and Riemann, H. and Redlich, B. and Hübers, Heinz-Wilhelm and Shastin, V. N. (2019) Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation. Semiconductors, 53, pp. 1255-1257. Springer. DOI: 10.1134/S1063782619090288 ISSN 1063-7826

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Official URL: https://link.springer.com/article/10.1134/S1063782619090288

Abstract

The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.

Item URL in elib:https://elib.dlr.de/135025/
Document Type:Article
Title:Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iD
Zhukavin, R. Kh.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Pavlov, SergeySergeij.Pavlov (at) dlr.deUNSPECIFIED
Pohl, AndreasA.Pohl (at) dlr.deUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, H.Leibniz Institute of Crystal Growth, Berlin, GermanyUNSPECIFIED
Redlich, B.FELIX Facility, Radboud University NijmegenUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Shastin, V. N.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIED
Date:2019
Journal or Publication Title:Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:53
DOI :10.1134/S1063782619090288
Page Range:pp. 1255-1257
Publisher:Springer
ISSN:1063-7826
Status:Published
Keywords:frequency Tuning, Silicon, uniaxial pressure
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:02 Jun 2020 08:44
Last Modified:02 Jun 2020 08:44

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