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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Shastin, V. N. and Zhukavin, R. Kh. and Kovalevsky, K. A. and Tsyplenkov, V. V. and Rumyantsev, V. and Shengurov, D.V. and Pavlov, Sergey and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Astrov, Yu. A. and Abrosimov, N. V. and Klopf, J.M. and Hübers, Heinz-Wilhelm (2019) Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission. Semiconductors, 53. Springer. doi: 10.1134/S1063782619090197. ISSN 1063-7826.

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Official URL: https://link.springer.com/article/10.1134/S1063782619090197

Abstract

Spectroscopy of valley-orbit split-off states in silicon doped by magnesium. Calculation of Relaxation rates of donor states.

Item URL in elib:https://elib.dlr.de/135024/
Document Type:Article
Title:Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Shastin, V. N.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIEDUNSPECIFIED
Zhukavin, R. Kh.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIEDUNSPECIFIED
Kovalevsky, K. A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Tsyplenkov, V. V.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIEDUNSPECIFIED
Rumyantsev, V.Institute for Physics of Microstructures of RAS, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Shengurov, D.V.institute for physics of microstructures, russain academy of sciencesUNSPECIFIEDUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Portsel, L. M.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Lodygin, A. N.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Astrov, Yu. A.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Klopf, J.M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:2019
Journal or Publication Title:Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:53
DOI:10.1134/S1063782619090197
Publisher:Springer
ISSN:1063-7826
Status:Published
Keywords:Photoconductivity, stimulated Raman scattering, silicon
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Vorhaben OptoRob (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:02 Jun 2020 08:44
Last Modified:02 Jun 2020 08:44

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