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Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

Zhukavin, R. Kh. and Pavlov, Sergey and Stavrias, N. and Saeedi, K. and Kovalevsky, K. A. and Phillips, J. and Tsyplenkov, V. V. and Abrosimov, N. V. and Riemann, H. and Deßmann, N. and Hübers, Heinz-Wilhelm and Shastin, V. N. (2020) Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon. Journal of Applied Physics, 127, 035706. American Institute of Physics (AIP). doi: 10.1063/1.5134691. ISSN 0021-8979.

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Item URL in elib:https://elib.dlr.de/133712/
Document Type:Article
Title:Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Zhukavin, R. Kh.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIEDUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Stavrias, N.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Saeedi, K.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Kovalevsky, K. A.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIEDUNSPECIFIED
Phillips, J.Central Laser Facility, STFC Rutherford Appleton Laboratory, Didcot OX11 0QX, United KingdomUNSPECIFIEDUNSPECIFIED
Tsyplenkov, V. V.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Riemann, H.Institut für Kristallzüchtung, Berlin, GermanyUNSPECIFIEDUNSPECIFIED
Deßmann, N.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Shastin, V. N.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Date:17 January 2020
Journal or Publication Title:Journal of Applied Physics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:127
DOI:10.1063/1.5134691
Page Range:035706
Publisher:American Institute of Physics (AIP)
ISSN:0021-8979
Status:Published
Keywords:Silicon, phonon-assisted relaxation, uniaxial deformation
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Vorhaben OptoRob (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:23 Jan 2020 08:19
Last Modified:20 Oct 2023 09:35

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