Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

Zhukavin, R. Kh. and Pavlov, Sergey and Stavrias, N. and Saeedi, K. and Kovalevsky, K. A. and Phillips, J. and Tsyplenkov, V. V. and Abrosimov, N. V. and Riemann, H. and Deßmann, N. and Hübers, Heinz-Wilhelm and Shastin, V. N. (2020) Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon. Journal of Applied Physics, 127, 035706. American Institute of Physics (AIP). DOI: 10.1063/1.5134691 ISSN 0021-8979

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Item URL in elib:

https://elib.dlr.de/133712/

Document Type:

Article

Title:

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

Authors:

Authors	Institution or Email of Authors	Authors ORCID iD
Zhukavin, R. Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences	UNSPECIFIED
Pavlov, Sergey	Sergeij.Pavlov (at) dlr.de	UNSPECIFIED
Stavrias, N.	FELIX Facility, Radboud University Nijmegen	UNSPECIFIED
Saeedi, K.	FELIX Facility, Radboud University Nijmegen	UNSPECIFIED
Kovalevsky, K. A.	Institute for Physics of Microstructures, Russian Academy of Science	UNSPECIFIED
Phillips, J.	Central Laser Facility, STFC Rutherford Appleton Laboratory, Didcot OX11 0QX, United Kingdom	UNSPECIFIED
Tsyplenkov, V. V.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED
Abrosimov, N. V.	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin	UNSPECIFIED
Riemann, H.	Institut für Kristallzüchtung, Berlin, Germany	UNSPECIFIED
Deßmann, N.	FELIX Facility, Radboud University Nijmegen	UNSPECIFIED
Hübers, Heinz-Wilhelm	Heinz-Wilhelm.Huebers (at) dlr.de	UNSPECIFIED
Shastin, V. N.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED

Date:

2020

Journal or Publication Title:

Journal of Applied Physics

Refereed publication:

Yes

Open Access:

Gold Open Access:

In SCOPUS:

Yes

In ISI Web of Science:

Yes

Volume:

127

DOI :

10.1063/1.5134691

Page Range:

035706

Publisher:

American Institute of Physics (AIP)

ISSN:

0021-8979

Status:

Published

Keywords:

Silicon, phonon-assisted relaxation, uniaxial deformation

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Space

HGF - Program Themes:

Space Technology

DLR - Research area:

Raumfahrt

DLR - Program:

R SY - Technik für Raumfahrtsysteme

DLR - Research theme (Project):

R - Vorhaben OptoRob

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy

Deposited By:

Pavlov, Dr. Sergey

Deposited On:

23 Jan 2020 08:19

Last Modified:

23 Jan 2020 08:19

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