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Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon

Abraham, R. J. S. and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Astrov, Yu. A. and Abrosimov, N. V. and Pavlov, Sergey and Hübers, Heinz-Wilhelm and Simmons, S. and Thewalt, M. L. W. (2019) Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon. Physical Review B (99), p. 195207. American Physical Society. DOI: 10.1103/PhysRevB.99.195207 ISSN 1098-0121

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Official URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.195207#fulltext

Abstract

Magnesium in silicon primarily occupies an interstitial site, where it acts as a moderately deep double donor. It has recently been shown that interstitial magnesium can pair with the substitutional acceptor boron to form a shallow single-donor center. In this work, we demonstrate analogous complexing with the other group-III acceptors Ga, In, and Al. We observe the odd-parity excited states of each shallow donor complex in absorption spectra, from which the ionization energies are obtained. These complexes can localize excitons, and we observe the donor bound exciton transitions of all four centers in photoluminescence spectra. The Mg-acceptor complexes are found to obey Haynes rule, which predicts a linear relationship between donor ionization energy and donor bound exciton localization energy.

Item URL in elib:https://elib.dlr.de/133282/
Document Type:Article
Title:Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Abraham, R. J. S.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIED
Shuman, V. B.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIED
Portsel, L. M.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIED
Lodygin, A. N.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIED
Astrov, Yu. A.Ioffe Physical-Technical Institute, St. Petersburg, RussiaUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Pavlov, SergeySergeij.Pavlov (at) dlr.deUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Simmons, S.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIED
Thewalt, M. L. W.Simon Fraser University, Burnaby, British Columbia, CanadaUNSPECIFIED
Date:2019
Journal or Publication Title:Physical Review B
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:No
DOI :10.1103/PhysRevB.99.195207
Page Range:p. 195207
Publisher:American Physical Society
ISSN:1098-0121
Status:Published
Keywords:double donors, Silicon, infrared spectroscopy
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:08 Jan 2020 08:46
Last Modified:08 Jan 2020 08:46

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