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Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver

Budroweit, Jan and Jaksch, Mattis and Sznajder, Maciej (2019) Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver. In: Radiation Tolerant electronics Electronics. MDPI. pp. 33-52. ISBN ISBN 978-3-03921-280-4.

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Official URL: https://www.mdpi.com/books/pdfview/book/1518

Abstract

Radio frequency (RF) systems in space applications are usually designed for a single task and its requirements. Flexibility is mostly limited to software-defined adaption of the signal processing in digital signal processors (DSP) or field-programmable gate arrays (FPGA). RF specifications, such as frequency band selection or RF filter bandwidth are thereby restricted to the specific application requirements. New radio frequency integrated circuit (RFIC) devices also allow the software-based reconfiguration of various RF specifications. A transfer of this RFIC technology to space systems would have a massive impact to future radio systems for space applications. The benefit of this RFIC technology allows a selection of different RF radio applications, independent of their RF parameters, to be executed on a single unit and, thus, reduces the size and weight of the whole system. Since most RF application sin space system require a high level of reliability and the RFIC is not designed for the harsh environment in space, a characterization under these special environmental conditions is mandatory. In this paper, we present the single event effect (SEE) characterization of a selected RFIC device under proton irradiation. The RFIC being tested is immune to proton induced single event latch-up and other destructive events and shows a very low response to single failure interrupts. Thus, the device is defined as a good candidate for future, highly integrated radio system in space applications.

Item URL in elib:https://elib.dlr.de/129456/
Document Type:Book Section
Title:Proton Induced Single Event Effect Characterization on a Highly Integrated RF-Transceiver
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Budroweit, JanJan.Budroweit (at) dlr.dehttps://orcid.org/0000-0001-7599-0836
Jaksch, Mattismattis.jaksch (at) dlr.deUNSPECIFIED
Sznajder, MaciejMaciej.Sznajder (at) dlr.dehttps://orcid.org/0000-0002-9917-0581
Date:August 2019
Journal or Publication Title:Radiation Tolerant electronics
Refereed publication:Yes
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
DOI :10.3390/books978-3-03921-280-4
Page Range:pp. 33-52
Publisher:MDPI
Series Name:Electronics
ISBN:ISBN 978-3-03921-280-4
Status:Published
Keywords:Radiation Tolerant Electronics
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):Proj Small Satellite Technology Experiment Platform
Location: Bremen
Institutes and Institutions:Institute of Space Systems > Mechanic and Thermal Systems
Institute of Space Systems > Avionics Systems
Deposited By: Budroweit, Jan
Deposited On:18 Oct 2019 11:08
Last Modified:18 Oct 2019 11:08

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