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A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films

Pareek, Devendra and Gonzalez, Marco A. and Zohrabian, Jannik and Sayed, Mohamed H. and Steenhoff, Volker and Lattyak, Colleen and Vehse, Martin and Agert, Carsten and Parisi, Jürgen and Schäfer, Sascha and Gütay, Levent (2019) A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films. RSC Advances, 9, pp. 107-113. Royal Society of Chemistry. doi: 10.1039/C8RA08626E. ISSN 2046-2069.

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Official URL: http://dx.doi.org/10.1039/C8RA08626E

Abstract

In this work a vapor-phase-assisted approach for the synthesis of monolayer MoS2 is demonstrated, based on the sulfurization of thin MoO3-x precursor films in an H2S atmosphere. We discuss the co-existence of various possible growth mechanisms, involving solid-gas and vapor–gas reactions. Different sequences were applied in order to control the growth mechanism and to obtain monolayer films. These variations include the sample temperature and a time delay for the injection of H2S into the reaction chamber. The optimized combination allows for tuning the process route towards the potentially more favorable vapor–gas reactions, leading to an improved material distribution on the substrate surface. Raman and photoluminescence (PL) spectroscopy confirm the formation of ultrathin MoS2 films on SiO2/Si substrates with a narrow thickness distribution in the monolayer range on length scales of a few millimeters. Best results are achieved in a temperature range of 950–1000 °C showing improved uniformity in terms of Raman and PL line shapes. The obtained films exhibit a PL yield similar to mechanically exfoliated monolayer flakes, demonstrating the high optical quality of the prepared layers.

Item URL in elib:https://elib.dlr.de/128683/
Document Type:Article
Title:A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iD
Pareek, Devendradevendra.pareek (at) uni-oldenburg.dehttps://orcid.org/0000-0001-7231-6686
Gonzalez, Marco A.Institute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Zohrabian, JannikInstitute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Sayed, Mohamed H.Institute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Steenhoff, Volkervolker.steenhoff (at) dlr.deUNSPECIFIED
Lattyak, Colleencolleen.lattyak (at) dlr.dehttps://orcid.org/0000-0001-6690-3585
Vehse, Martinmartin.vehse (at) dlr.dehttps://orcid.org/0000-0003-0578-6121
Agert, Carstencarsten.agert (at) dlr.dehttps://orcid.org/0000-0003-4733-5257
Parisi, JürgenInstitute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Schäfer, SaschaInstitute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Gütay, LeventInstitute of Physics, Carl von Ossietzky University of OldenburgUNSPECIFIED
Date:2019
Journal or Publication Title:RSC Advances
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:9
DOI :10.1039/C8RA08626E
Page Range:pp. 107-113
Editors:
EditorsEmailEditor's ORCID iD
UNSPECIFIEDThe Royal Society of ChemistryUNSPECIFIED
Publisher:Royal Society of Chemistry
ISSN:2046-2069
Status:Published
Keywords:MoS2 monolayer; vapor-phase-assisted growth
HGF - Research field:Energy
HGF - Program:Technology, Innovation and Society
HGF - Program Themes:Renewable Energy and Material Resources for Sustainable Futures - Integrating at Different Scales
DLR - Research area:Energy
DLR - Program:E SY - Energy Systems Analysis
DLR - Research theme (Project):E - Energy Systems Technology (old)
Location: Oldenburg
Institutes and Institutions:Institute of Networked Energy Systems > Urban and Residential Technologies
Deposited By: Kröner, Michael
Deposited On:16 Dec 2019 12:18
Last Modified:09 Apr 2020 14:15

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