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Optical Performance of laser-patterned high-resistivity Silicon Wafer in the frequency range of 0.1-4.7 THz

Indrisiunas, Simonas and Svirplys, Evaldas and Richter, Heiko and Urbanowicz, Andrzej and Raciukaitis, Gediminas and Hagelschuer, Till and Hübers, Heinz-Wilhelm and Kasalynas, Irmantas (2019) Optical Performance of laser-patterned high-resistivity Silicon Wafer in the frequency range of 0.1-4.7 THz. 30th International Symposium on Space Terahertz Technology, 15.-17. April 2019, Göteborg, Schweden.

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Abstract

Direct laser ablation (DLA) is a mask-less technology used for the research and development of optical components of various materials [1]. The relevance of the DLA technology is verified demonstrating the functional optical components including multilevel phase Fresnel lenses on silicon and Soret zone plates developed on a free standing metal-foil [2]. In order to reduce the reflection losses, the anti-reflection structures on a back side of silicon wafer can be patterned by the same DLA technology as this has been proposed recently [3]. In this work we studied optical transmission of laser patterned high resistivity silicon wafers used for development of the diffractive optics in the frequency range of 0.1 – 4.7 THz. The samples were prepared on a 500 µm thick, both-sides polished, high resistivity silicon wafer varying the surrounding environment as well as the DLA parameters in order to modify the composition and roughness of the surface modified. Most of the samples were fabricated in an ambient air, while others were developed in an argon-rich atmosphere at the pressure of 1 atm and 2 atm. Stylus profiler and scanning electron microscope were employed to characterize the samples morphology. Optical performances were studied measuring with a Golay cell detector the transmittance of the THz beam of a quantum cascade laser (QCL) operating at 2.5, 3.1, and 4.7 THz. The dielectric constants dispersion for each sample was also obtained by a THz time domain spectroscopy (TDS). Dependence of transmittance on surface roughness at different THz frequency allowed us to identify the critical value Ra at which the transmittance dropped by 20%. For example data presented in Fig. 1 indicates that the critical Ra value at frequency 4.7 THz is of about 1.9 m. We will discuss a nonlinear dependence of the critical Ra value on the THz radiation frequency. The impact of silicon processing in an oxygen-free environment to the transmittance performance will also be demonstrated and discussed.

Item URL in elib:https://elib.dlr.de/127392/
Document Type:Conference or Workshop Item (Poster)
Title:Optical Performance of laser-patterned high-resistivity Silicon Wafer in the frequency range of 0.1-4.7 THz
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Indrisiunas, SimonasCenter for Physical Sciences and Technology, Vilnius, LithuaniaUNSPECIFIED
Svirplys, EvaldasCenter for Physical Sciences and Technology, Vilnius, LithuaniaUNSPECIFIED
Richter, HeikoHeiko.Richter (at) dlr.dehttps://orcid.org/0000-0002-3639-6997
Urbanowicz, AndrzejCenter for Physical Sciences and Technology, Vilnius, LithuaniaUNSPECIFIED
Raciukaitis, GediminasCenter for Physical Sciences and Technology, Vilnius, LithuaniaUNSPECIFIED
Hagelschuer, TillTill.Hagelschuer (at) dlr.deUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Kasalynas, Irmantasirmantas.kasalynas (at) ftmc.ltUNSPECIFIED
Date:April 2019
Refereed publication:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:THz, laser-pattern, silicon
Event Title:30th International Symposium on Space Terahertz Technology
Event Location:Göteborg, Schweden
Event Type:international Conference
Event Dates:15.-17. April 2019
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Earth Observation
DLR - Research area:Raumfahrt
DLR - Program:R EO - Erdbeobachtung
DLR - Research theme (Project):R - Vorhaben Sicherheitsrelevante Erdbeobachtung
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Richter, Dr.rer.nat. Heiko
Deposited On:09 May 2019 08:10
Last Modified:09 May 2019 08:10

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