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Analyzing transport properties of p-type Mg2Si-Mg2Sn solid solutions: Optimization of thermoelectric performance and insight into the electronic band structure

Kamila, Hasbuna and Sahu, Prashant and Sankhla, Aryan and Yasseri, Mohammad and Pham, Ngan Hoang and Dasgupta, Titas and Müller, Eckhard and de Boor, Johannes (2018) Analyzing transport properties of p-type Mg2Si-Mg2Sn solid solutions: Optimization of thermoelectric performance and insight into the electronic band structure. Journal of Materials Chemistry A. Royal Society of Chemistry. DOI: 10.1039/C8TA08920E ISSN 2050-7488

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Abstract

We have synthesized the complete stoichiometric range of the p-Mg2Si1-xSnx striving for the optimization of the thermoelectric properties of p-type Mg2(Si, Sn) with respect to composition. The experimental data is analyzed in the framework of a single parabolic band (SPB) model and we can show that the thermoelectric properties can be well presented if acoustic phonon scattering and alloy scattering are taken into account. We find that the maximum achievable carrier concentration and power factor increase with higher Sn content. Also, the carrier mobility increases strongly from Mg2Si to Mg2Sn due to changing density of states effective mass for the valence band which decreases from m_(D )^* (〖Mg〗_2 Si)=2.2 m_0 to m_D^* (〖Mg〗_2 Sn)=1.1 m_0. Retrieval of the acoustic phonon scattering potential (E_Def=9 eV) and the alloy scattering parameter (E_AS=0.5 eV) allows modelling the thermoelectric properties for any arbitrary composition. Hence, we can predict the optimum zT for x ≈0.65-0.7 and the maximum power factor for Sn-rich compositions. We furthermore reveal that significant improvement of the thermoelectric properties of Si-rich compositions can be achieved by increasing the carrier concentration experimentally and that difference between n- and p-type Mg2(Si, Sn) is due to the disparity between the valence and the conduction bands and not the interaction potentials.

Item URL in elib:https://elib.dlr.de/124064/
Document Type:Article
Title:Analyzing transport properties of p-type Mg2Si-Mg2Sn solid solutions: Optimization of thermoelectric performance and insight into the electronic band structure
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Kamila, HasbunaGerman aerospace center, Institute of materials research, Köln, GermanyUNSPECIFIED
Sahu, PrashantDepartment of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, IndiaUNSPECIFIED
Sankhla, Aryangerman aerospace center, institute of materials research, köln, germanyhttps://orcid.org/0000-0002-1527-6902
Yasseri, MohammadGerman aerospace center, Institute of materials research, Köln, Germany and Justus Liebig university Giessen, Institute of inorganic and analytical chemistry, 35392 Giessen, GermanyUNSPECIFIED
Pham, Ngan Hoanggerman aerospace center, institute of materials research, köln, germanyUNSPECIFIED
Dasgupta, TitasDepartment of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, IndiaUNSPECIFIED
Müller, EckhardGerman Aerospace Center, Institute of Materials Research, Köln, Germany and Justus Liebig University Giessen, Institute of Inorganic and Analytical Chemistry, 35392 Giessen, GermanyUNSPECIFIED
de Boor, JohannesGerman aerospace center, institute of materials research, köln, germanyhttps://orcid.org/0000-0002-1868-3167
Date:26 November 2018
Journal or Publication Title:Journal of Materials Chemistry A
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1039/C8TA08920E
Publisher:Royal Society of Chemistry
ISSN:2050-7488
Status:Published
Keywords:Transport Properties, p-type Mg2Si-Mg2Sn Solid Solutions, Optimization, Thermoelectric Performance, Elelectronic Band Structure
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Systemtechnologien
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Research > Thermoelectric Materials and Systems
Deposited By: Yasseri, Mohammad
Deposited On:14 Dec 2018 09:21
Last Modified:06 Sep 2019 15:30

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