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Ideal gas thermochemical properties of silicon containing inorganic, organic compounds, radicals, and ions

Burcat, Alexander and Goos, Elke (2018) Ideal gas thermochemical properties of silicon containing inorganic, organic compounds, radicals, and ions. International Journal of Chemical Kinetics, 50, pp. 633-650. Wiley. DOI: 10.1002/kin.21188 ISSN 0538-8066

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Official URL: http://dx.doi.org/10.1002/kin.21188


Item URL in elib:https://elib.dlr.de/123629/
Document Type:Article
Title:Ideal gas thermochemical properties of silicon containing inorganic, organic compounds, radicals, and ions
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Burcat, AlexanderFaculty of Aerospace Engineering, Technion–Israel Institute of Technology, Haifa, IsraelUNSPECIFIED
Goos, ElkeUNSPECIFIEDUNSPECIFIED
Date:2018
Journal or Publication Title:International Journal of Chemical Kinetics
Refereed publication:Yes
Open Access:Yes
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:50
DOI :10.1002/kin.21188
Page Range:pp. 633-650
Publisher:Wiley
ISSN:0538-8066
Status:Published
Keywords:database, enthalpy, entropy, G3B3 composite approach, heat capacity, heat of formation, NASA format, quantum chemical calculation, silanes, silicon compounds, silicon fluoride, silicon hydride, silicon hydrocarbon, silicon ions, thermochemical properties, thermochemistry, thermodynamic data
HGF - Research field:Energy
HGF - Program:Energy Efficiency, Materials and Resources
HGF - Program Themes:Efficient Use of Fuel Resources
DLR - Research area:Energy
DLR - Program:E VS - Combustion Systems
DLR - Research theme (Project):E - Fuels
Location: Stuttgart
Institutes and Institutions:Institute of Combustion Technology > Chemical Kinetics
Deposited By: Geigle, Dr. Klaus Peter
Deposited On:29 Nov 2018 06:27
Last Modified:09 Dec 2019 09:52

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