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Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

Pavlov, S.G. and Deßmann, N. and Redlich, Britta and Meer, A.F.G. van der and Abrosimov, Nickolay and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm (2018) Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon. Physical Review X (8), 041003. American Physical Society. doi: 10.1103/PhysRevX.8.041003. ISSN 2160-3308.

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We report on an optically pumped laser where photons are simultaneously generated by Population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi). The medium utilizes three electronic levels: ground state [1], upper [3] and lower [2] laser levels. The 1 ↔ 3 and 2 ↔ 3 transitions are optically allowed and the 1 ↔ 2 transition is Raman active. Lasing based on population inversion occurs between the states 3 and 2, while Raman scattering benefits from the Raman-active transition. At high pump power the inversion-based stimulated emission 3 → 2 disappears, because electronic scattering from 1 to 2 via a virtual state dominates and the electrons are excited into 2 rather than into 3. Starting as population inversion-based lasing, it ends as stimulated Raman scattering. Our model shows that such a competition occurs on the timescale of the 10-ps-long pump pulse.

Item URL in elib:https://elib.dlr.de/122231/
Document Type:Article
Title:Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIEDUNSPECIFIED
Meer, A.F.G. van derFOM-Institute for Plasma Physics, Rijnhuizen, Nieuwegein, The NetherlandsUNSPECIFIEDUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIEDUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Journal or Publication Title:Physical Review X
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In ISI Web of Science:Yes
Page Range:041003
Publisher:American Physical Society
Keywords:Raman lasing, Inversion Population, three-level laser scheme
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Vorhaben OptoRob (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:15 Nov 2018 13:48
Last Modified:22 Nov 2023 07:00

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