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Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

Pavlov, S.G. and Deßmann, N. and Redlich, Britta and Meer, A.F.G. van der and Abrosimov, Nickolay and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm (2018) Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon. Physical Review X (8), 041003. American Physical Society. DOI: 10.1103/PhysRevX.8.041003 ISSN 2160-3308

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Abstract

We report on an optically pumped laser where photons are simultaneously generated by Population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi). The medium utilizes three electronic levels: ground state [1], upper [3] and lower [2] laser levels. The 1 ↔ 3 and 2 ↔ 3 transitions are optically allowed and the 1 ↔ 2 transition is Raman active. Lasing based on population inversion occurs between the states 3 and 2, while Raman scattering benefits from the Raman-active transition. At high pump power the inversion-based stimulated emission 3 → 2 disappears, because electronic scattering from 1 to 2 via a virtual state dominates and the electrons are excited into 2 rather than into 3. Starting as population inversion-based lasing, it ends as stimulated Raman scattering. Our model shows that such a competition occurs on the timescale of the 10-ps-long pump pulse.

Item URL in elib:https://elib.dlr.de/122231/
Document Type:Article
Title:Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Meer, A.F.G. van derFOM-Institute for Plasma Physics, Rijnhuizen, Nieuwegein, The NetherlandsUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2018
Journal or Publication Title:Physical Review X
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1103/PhysRevX.8.041003
Page Range:041003
Publisher:American Physical Society
ISSN:2160-3308
Status:Published
Keywords:Raman lasing, Inversion Population, three-level laser scheme
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:15 Nov 2018 13:48
Last Modified:01 Dec 2018 19:53

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