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Cascade capture of charge carriers in highly doped semiconductors

Orlova, E.E. and Kelsall, R.W. and Deßmann, N. and Pavlov, S.G. and Hübers, Heinz-Wilhelm and Zhukavin, R.Kh. and Shastin, V.N. (2018) Cascade capture of charge carriers in highly doped semiconductors. Journal of Applied Physics (124), 085704. American Institute of Physics (AIP). DOI: 10.1063/1.5035301 ISSN 0021-8979

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Official URL: https://aip.scitation.org/doi/10.1063/1.5035301

Abstract

We analyze the cascade capture of charge carriers due to the interaction with acoustic phonons in highly doped semiconductors using a model that describes the recombination of photo-ionized carriers as a continuous relaxation of carriers in the energy space at both positive and negative energies in the field of a set of impurity ions. Such description enables simultaneous calculation of nonequilibrium carrier distribution formed by interaction with acoustic phonons in the presence of impurity traps, and the time of recombination in a wide range of concentrations of capture centers and phonon temperatures. Additionally, we calculated the time of cascade recombination in the presence of fast scattering processes forming a Maxwellian distribution of free carriers. We show that experimentally observed concentration and temperature dependence of carrier life times in highly doped semiconductors can be described within the model of the cascade capture to uniformly spaced capture centers, and the main factor that determines the regime of cascade capture is the ratio of the thermal energy and the energy of the overlap of impurity potentials.

Item URL in elib:https://elib.dlr.de/121482/
Document Type:Article
Title:Cascade capture of charge carriers in highly doped semiconductors
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Orlova, E.E.School of Electrical and Electronics Engineering, Pollard Institute, University of Leeds, Leeds, UKUNSPECIFIED
Kelsall, R.W.School of Electrical and Electronics Engineering, Pollard Institute, University of Leeds, Leeds, UKUNSPECIFIED
Deßmann, N.Department of Physics, Humboldt-Universitat zu Berlin, Berlin, GermanyUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:2018
Journal or Publication Title:Journal of Applied Physics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1063/1.5035301
Page Range:085704
Publisher:American Institute of Physics (AIP)
ISSN:0021-8979
Status:Published
Keywords:doped semiconductor, cascade capture
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:28 Aug 2018 09:12
Last Modified:01 Dec 2018 19:53

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