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Comparative studies on thermoelectric properties of p-type Mg2Sn0.75Ge0.25 doped with lithium, sodium, and gallium

Saparamadu, Udara and de Boor, Johannes and Mao, Jun and Song, Shaowei and Tian, Fei and Liu, Weishu and Zhang, Qinyong and Zhifeng, Ren (2017) Comparative studies on thermoelectric properties of p-type Mg2Sn0.75Ge0.25 doped with lithium, sodium, and gallium. Acta Materialia, pp. 154-162. Elsevier. DOI: 10.1016/j.actamat.2017.09.009 ISSN 1359-6454

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Abstract

Mg(Sn,Si) and Mg(Sn,Ge) are promising n-type thermoelectric materials with good thermoelectric properties in the temperature range of 300e800 K. For power generation, similar thermoelectric performance of p-type materials is equally important. However, p-type material performance is much worse than the n-type, because achieving optimized carrier concentration has been difficult for the p-type Mg2X (X ¼ Sn, Si). In this study we systematically compared the effect of the dopants Li, Na, and Ga and found that the highest carrier concentrations are achievable in Li-doped samples. Due to the relatively high content of Sn, carrier concentration of > 5 � 1019 cm�3 were achieved for all dopants. Analysis of the transport data in the framework of a single parabolic band model showed similar and carrier concentration independent effective masses for all dopants. Our results therefore indicate a rigid band structure for p-type Mg2X for the studied dopants, in contrast to previous reports. Higher carrier mobilities have been achieved for Li-doped samples compared to the previous reports. Larger Hall mobilities leads to a higher peak power factor. Due to the higher carrier concentration, the onset of intrinsic excitations (bipolar effect) effectively shifts to higher temperature compared to the other two dopants, which results in a peak figure of merit of ~0.5 at 723 K for Li doped samples.

Item URL in elib:https://elib.dlr.de/115054/
Document Type:Article
Title:Comparative studies on thermoelectric properties of p-type Mg2Sn0.75Ge0.25 doped with lithium, sodium, and gallium
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Saparamadu, UdaraDepartment of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USAUNSPECIFIED
de Boor, JohannesGerman aerospace center, institute of materials research, köln, germanyhttps://orcid.org/0000-0002-1868-3167
Mao, JunDepartment of Mechanical Engineering, University of Houston, Houston, TX 77204, USAUNSPECIFIED
Song, ShaoweiProgram of Material Science and Engineering, University of Houston, Houston, TX 77204, USAUNSPECIFIED
Tian, FeiDepartment of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USAUNSPECIFIED
Liu, WeishuDepartment of Materials Science & Engineering, South University of Science & Technology of China, Shenzhen, Guangdong 518055, ChinaUNSPECIFIED
Zhang, QinyongCenter of Advanced Materials and Energy, Xihua University, Chengdu, Sichuan 610039, ChinaUNSPECIFIED
Zhifeng, RenDepartment of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USAUNSPECIFIED
Date:7 September 2017
Journal or Publication Title:Acta Materialia
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1016/j.actamat.2017.09.009
Page Range:pp. 154-162
Publisher:Elsevier
ISSN:1359-6454
Status:Published
Keywords:p-type Mg2Sn0.75Ge0.25, Thermoelectric, Power factor
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Terrestrial Vehicles (old)
DLR - Research area:Transport
DLR - Program:V BF - Bodengebundene Fahrzeuge
DLR - Research theme (Project):V - NGC-Antriebsstrang (old)
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Research > Thermoelectric Materials and Systems
Deposited By: Yasseri, Mohammad
Deposited On:22 Nov 2017 10:19
Last Modified:10 Jan 2019 15:45

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