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Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist

Charaev, Ilya and Silbernagel, T and Bachowsky, B and Kuzmin, Artem and Doerner, Stefan and Ilin, Konstantin and Semenov, Alexey and Roditchev, D and Vodolazov, Denis and Siegel, Michael (2017) Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist. Journal of Applied Physics. American Institute of Physics (AIP). doi: 10.1063/1.4986416. ISSN 0021-8979.

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We performed comparative experimental investigation of superconducting NbN nanowires which were prepared by means of positive- and negative electron-beam lithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist. We show that nanowires with a thickness 4.9 nm and widths less than 100 nm demonstrate at 4.2K higher critical temperature and higher density of critical and retrapping currents when they are prepared by negative lithography. Also the ratio of the experimental critical current to the depairing critical current is larger for nanowires prepared by negative lithography. We associate the observed enhancement of superconducting properties with the difference in the degree of damage that nanowire edges sustain in the lithographic process. A whole range of advantages which is offered by the negative lithography with positive PMMA resist ensures high potential of this technology for improving the performance metrics of superconducting nanowire singe-photon detectors.

Item URL in elib:https://elib.dlr.de/113880/
Document Type:Article
Title:Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Charaev, Ilyauniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Silbernagel, Tuniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Bachowsky, Buniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Kuzmin, Artemuniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Doerner, Stefanuniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Ilin, Konstantinuniversity of karlsruheUNSPECIFIEDUNSPECIFIED
Roditchev, Dinstitut des nanosciences de paris, cnrs-umr 7588, université pierre et marie curie-paris 6 upmc, 4 place jussieu, 75252, paris, franceUNSPECIFIEDUNSPECIFIED
Vodolazov, Denisinstitute for physics of microstructures, russian academy of sciences, 603950, nizhny novgorod, gsp-105, russiaUNSPECIFIEDUNSPECIFIED
Siegel, Michaeluniversität karlsruheUNSPECIFIEDUNSPECIFIED
Date:22 August 2017
Journal or Publication Title:Journal of Applied Physics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In ISI Web of Science:Yes
Publisher:American Institute of Physics (AIP)
Keywords:nanowires, lithography, critical current
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):Vorhaben Quantensensorik (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Semenov, Prof.Dr. Alexey
Deposited On:05 Sep 2017 14:35
Last Modified:18 Dec 2019 04:19

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