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Diffusion doping of silicon with magnesium

Astrov, Yu. A. and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Pavlov, S.G. and Abrosimov, N.V. and Shastin, V.N. and Hübers, H.-W. (2017) Diffusion doping of silicon with magnesium. Physica Status Solidi (A) - Applications and Materials Science (7), p. 1700192. Wiley. DOI: 10.1002/pssa.201700192 ISSN 1862-6300

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700192/full

Abstract

Doping of silicon with magnesiumis investigated by a sandwich diffusion technique. Temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000–1200 8C is determined. It obeys the Arrhenius behavior over the range of 600–1200°C, when the data obtained earlier for the lower temperatures are taken into consideration. Preliminary results on Mg diffusion in the dislocated crystals are also presented. The dislocation-free Si:Mg samples are investigated with the Hall-effect measurements and the low-temperature Fourier spectroscopy. A decrease in concentration of Mg interstitials (about 15%) has been observed after 31 months of the samples storage at room temperature, when a commercially available FZ silicon was used as a starting material. The effect of the samples degradation is proposed to be due to a formation of Mg-O complexes. When using a special silicon purified from oxygen and carbon with concentrations below or equal to 1.5 x 10^14 and 5 x 10^14 cm ^-3, respectively, a decrease in the density of interstitial magnesium has not been noticed during this period. The storage of Si:Mg samples prepared from pure silicon gives rise to the formation of an unknown center, whose ionization energy is between the corresponding values for the interstitial Mg^0 centers and (Mg-O)^0 complexes.

Item URL in elib:https://elib.dlr.de/113353/
Document Type:Article
Title:Diffusion doping of silicon with magnesium
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Astrov, Yu. A.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIED
Shuman, V. B.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIED
Portsel, L. M.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIED
Lodygin, A. N.ioffe physical-technical institute, st. petersburg, russiaUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Abrosimov, N.V.leibniz-institut für kristallzüchtung (ikz), berlinUNSPECIFIED
Shastin, V.N.institute for physics of microstructures, russian academy of sciences, nizhny novgorod, russiaUNSPECIFIED
Hübers, H.-W.heinz-wilhelm.huebers (at) dlr.deUNSPECIFIED
Date:July 2017
Journal or Publication Title:Physica Status Solidi (A) - Applications and Materials Science
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1002/pssa.201700192
Page Range:p. 1700192
Publisher:Wiley
ISSN:1862-6300
Status:Published
Keywords:Silicon, Diffusion doping, Infrared spectroscopy
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob, R - Vorhaben Optische Technologien und Anwendungen
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:24 Jul 2017 14:12
Last Modified:06 Sep 2019 15:29

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