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Carrier recombination in doped Silicon and germanium

Hübers, Heinz-Wilhelm (2017) Carrier recombination in doped Silicon and germanium. 2017 FELBE User Workshop, 24.-25. Apr. 2017, Rossendorf.

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Item URL in elib:https://elib.dlr.de/112118/
Document Type:Conference or Workshop Item (Speech)
Title:Carrier recombination in doped Silicon and germanium
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Hübers, Heinz-Wilhelmdlr, institut für optische sensorsystemeUNSPECIFIED
Date:2017
Refereed publication:No
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:terahertz, Spektroskopie, Halbleiter, Germanium, Silizium
Event Title:2017 FELBE User Workshop
Event Location:Rossendorf
Event Type:Workshop
Event Dates:24.-25. Apr. 2017
Organizer:HZDR
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Earth Observation
DLR - Research area:Raumfahrt
DLR - Program:R EO - Erdbeobachtung
DLR - Research theme (Project):R - Vorhaben Optische Technologien und Anwendungen
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Dombrowski, Ute
Deposited On:05 May 2017 14:47
Last Modified:05 May 2017 14:47

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