elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Privacy Policy | Contact | Deutsch
Fontsize: [-] Text [+]

Evaluation and Qualification of RadHard Infineon Power MOSFETs

Joormann, Guido (2012) Evaluation and Qualification of RadHard Infineon Power MOSFETs. Microelectronics Workshop (MEWS 25), 01.-02. Nov 2012, Tsukuba, Japan.

[img] PDF
1MB

Abstract

In electronic space equipment Power-MOSFETs are needed almost everywhere. However, these parts are sensitive to space radiation. There is currently only one space qualified U.S. manufacturer of radiation hardened power MOSFETs worldwide. In addition, the products are subject to the very stringent export regulations of the US State Department. Thus, the success of the European Space Industry is restricted strongly by the U.S. supply. That is why Europe has been trying for a long time to develop a Power-MOSFET technology. For several years, DLR is conducting development projects in this area. By now we are able to present positive results. Fundamental studies were carried out with the aim to select the most appropriate technology at Infineon and to identify simple process modifications that allow the desired improvement in radiation resistance. The Cool-MOS transistor was identified as the best suited component for radiation hardening. The results have shown that there is no single measure that will allow to attain the goal of radiation-hardened MOSFETs on the existing process line in the short-term. Rather, it was recognized that fundamental changes need to be introduced to the commercial process to realise the desired radiation resistance for the Cool-MOS transistor. In addition a short overview on running parts activities at DLR will be given.

Item URL in elib:https://elib.dlr.de/111641/
Document Type:Conference or Workshop Item (Speech)
Title:Evaluation and Qualification of RadHard Infineon Power MOSFETs
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Joormann, Guidoguido.joormann (at) dlr.dehttps://orcid.org/0000-0001-7688-7232
Date:2 November 2012
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:Radiation Hardened (RadHard) Power MOSFETs, Qualification, EEE-Parts, Mosfet, space equipment, radhard, radiation resistance
Event Title:Microelectronics Workshop (MEWS 25)
Event Location:Tsukuba, Japan
Event Type:Workshop
Event Dates:01.-02. Nov 2012
Organizer:JAXA
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:other
DLR - Research area:Raumfahrt
DLR - Program:R - no assignment
DLR - Research theme (Project):R - no assignment
Location: Köln-Porz
Institutes and Institutions:Quality Management and Product Safety Device > Standardization and EEE-Parts
Deposited By: Joormann, Guido
Deposited On:21 Apr 2017 15:14
Last Modified:31 Jul 2019 20:08

Repository Staff Only: item control page

Browse
Search
Help & Contact
Information
electronic library is running on EPrints 3.3.12
Copyright © 2008-2017 German Aerospace Center (DLR). All rights reserved.