Evaluation and Qualification of RadHard Infineon Power MOSFETs

Abstract

In electronic space equipment Power-MOSFETs are needed almost everywhere. However, these parts are sensitive to space radiation. There is currently only one space qualified U.S. manufacturer of radiation hardened power MOSFETs worldwide. In addition, the products are subject to the very stringent export regulations of the US State Department. Thus, the success of the European Space Industry is restricted strongly by the U.S. supply. That is why Europe has been trying for a long time to develop a Power-MOSFET technology. For several years, DLR is conducting development projects in this area. By now we are able to present positive results. Fundamental studies were carried out with the aim to select the most appropriate technology at Infineon and to identify simple process modifications that allow the desired improvement in radiation resistance. The Cool-MOS transistor was identified as the best suited component for radiation hardening. The results have shown that there is no single measure that will allow to attain the goal of radiation-hardened MOSFETs on the existing process line in the short-term. Rather, it was recognized that fundamental changes need to be introduced to the commercial process to realise the desired radiation resistance for the Cool-MOS transistor. In addition a short overview on running parts activities at DLR will be given.