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New Technologies for Space Projects: Gallium Nitride (GaN) Power Switching Transistors & Assembly- and Test House (ATH)

Joormann, Guido (2015) New Technologies for Space Projects: Gallium Nitride (GaN) Power Switching Transistors & Assembly- and Test House (ATH). The Micoelectronics Workshop (MEWS 28), 21.-22. Okt 2015, Tsukuba, Japan.

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Abstract

This presentation has the focus on two DLR projects: GaN and ATH. 1. Nowadays RF power amplifiers are key components for satellite communications. They require power switching transistors for their power supply. For these applications European equipment manufacturers are currently forced to use power MOSFETs based on silicon technology. Though GaN Power switching transistors show advantages in terms of resistance and breakdown voltage compared to silicon transistors they are not yet ready for space applications. The German Aerospace Center (DLR) is currently running a project aiming for a radiation characterisation of GaN transistor topologies in order to prepare a subsequent space qualification. 2. More and more semiconductor components would be available for space applications if their assembly into space suitable packages and testing could be enabled. But only a few manufacturers intend to serve the small space market with its small quantities. Consequently DLR has certified a first Assembly- and Test House which centers procurement of chips, packaging, assembly, testing and marketing of space qualified parts. The speech will close with a short overview on running parts activities at DLR.

Item URL in elib:https://elib.dlr.de/111640/
Document Type:Conference or Workshop Item (Speech)
Title:New Technologies for Space Projects: Gallium Nitride (GaN) Power Switching Transistors & Assembly- and Test House (ATH)
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Joormann, Guidoguido.joormann (at) dlr.dehttps://orcid.org/0000-0001-7688-7232
Date:21 October 2015
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:Gallium Nitride (GaN) Power Switching Transistors, Assembly- and Test House (ATH), Qualification, EEE-Parts, Gallium Nitride, GaN, Transistor, Assembly
Event Title:The Micoelectronics Workshop (MEWS 28)
Event Location:Tsukuba, Japan
Event Type:Workshop
Event Dates:21.-22. Okt 2015
Organizer:JAXA
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:other
DLR - Research area:Raumfahrt
DLR - Program:R - no assignment
DLR - Research theme (Project):R - no assignment
Location: Köln-Porz
Institutes and Institutions:Quality Management and Product Safety Device > Standardization and EEE-Parts
Deposited By: Joormann, Guido
Deposited On:20 Apr 2017 09:34
Last Modified:31 Jul 2019 20:08

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