New Technologies for Space Projects: Gallium Nitride (GaN) Power Switching Transistors & Assembly- and Test House (ATH)

Abstract

This presentation has the focus on two DLR projects: GaN and ATH. 1. Nowadays RF power amplifiers are key components for satellite communications. They require power switching transistors for their power supply. For these applications European equipment manufacturers are currently forced to use power MOSFETs based on silicon technology. Though GaN Power switching transistors show advantages in terms of resistance and breakdown voltage compared to silicon transistors they are not yet ready for space applications. The German Aerospace Center (DLR) is currently running a project aiming for a radiation characterisation of GaN transistor topologies in order to prepare a subsequent space qualification. 2. More and more semiconductor components would be available for space applications if their assembly into space suitable packages and testing could be enabled. But only a few manufacturers intend to serve the small space market with its small quantities. Consequently DLR has certified a first Assembly- and Test House which centers procurement of chips, packaging, assembly, testing and marketing of space qualified parts. The speech will close with a short overview on running parts activities at DLR.