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Evidence of linear Zeeman effect for infrared intracenter transitions in boron doped diamond in high magnetic fields

Tarelkin, S. A. and Bormashov, V. S. and Pavlov, S.G. and Kamenskyi, D. L. and Kuznetsov, M. S. and Terentiev, S. A. and Prikhodko, D. D. and Galkin, A. S. and Hübers, H.-W. and Blank, V. D. (2017) Evidence of linear Zeeman effect for infrared intracenter transitions in boron doped diamond in high magnetic fields. Diamond and Related Materials (75), pp. 52-57. Elsevier. DOI: 10.1016/j.diamond.2017.01.004 ISSN 0925-9635

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Official URL: http://www.sciencedirect.com/science/article/pii/S0925963516306483

Abstract

In this paper, the evolution of the infra-red absorption of high-quality epitaxial diamond films versus boron concentration is reported. Homoepitaxial diamond films were grown by microwave-plasma-assisted chemical vapour deposition on type Ib crystals. From 2e17 to 8e20 1/cm3 of boron were incorporated in the diamond from the gas phase during growth. The main absorption features are (1) a single phonon absorption around 160 meV, (2) a series of three lines at 304, 347 and 363 meV due to excited states of the bound hole, (3) a photoionisation continuum, and (4) a phonon replica of these electronic transitions. The Evolution of these absorption with the boron concentration is presented and discussed. A strong increase in the photoionisation crosssection for boron concentrations above 5e18 1/cm3 is observed. New linear relationships between the boron concentration and the integrated absorption at 347 meV and the photoionisation are proposed. From the evolution of the lines due to transitions to boron-excited states, we deduced the width of the impurity band versus the boron concentration.

Item URL in elib:https://elib.dlr.de/111369/
Document Type:Article
Title:Evidence of linear Zeeman effect for infrared intracenter transitions in boron doped diamond in high magnetic fields
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Tarelkin, S. A.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Bormashov, V. S.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Kamenskyi, D. L.High Field Magnet Laboratory (HFML - EMFL), Radboud University, Nijmegen, The NetherlandsUNSPECIFIED
Kuznetsov, M. S.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Terentiev, S. A.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Prikhodko, D. D.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Galkin, A. S.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Hübers, H.-W.heinz-wilhelm.huebers (at) dlr.deUNSPECIFIED
Blank, V. D.Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, RussiaUNSPECIFIED
Date:2017
Journal or Publication Title:Diamond and Related Materials
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
DOI :10.1016/j.diamond.2017.01.004
Page Range:pp. 52-57
Publisher:Elsevier
ISSN:0925-9635
Status:Published
Keywords:boron doped diamond, Zeeman effect, infrared
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob, R - Vorhaben Optische Technologien und Anwendungen
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:03 Mar 2017 08:41
Last Modified:11 Sep 2017 11:08

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