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Contactless processing of SiGe-melts in EML under reduced gravity

Luo, Yuansu and Damaschke, Bernd and Schneider, Stephan and Lohöfer, Georg and Abrosimov, Nikolay and Czupalla, Matthias and Samwer, Konrad (2016) Contactless processing of SiGe-melts in EML under reduced gravity. npj Microgravity, 2, pp. 1-9. Nature Publishing Group. doi: 10.1038/s41526-016-0007-3. ISSN 2373-8065.

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Official URL: http://www.nature.com/articles/s41526-016-0007-3

Abstract

The processing of semiconductors based on lectromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si1−xGex under microgravity conditions in the framework of parabola flight campaigns. due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal Expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and Shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures.

Item URL in elib:https://elib.dlr.de/109777/
Document Type:Article
Title:Contactless processing of SiGe-melts in EML under reduced gravity
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Luo, YuansuUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Damaschke, BerndUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Schneider, StephanUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Lohöfer, GeorgUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Abrosimov, Nikolayinstitute of crystal growth, 12489 berlin, germanyUNSPECIFIEDUNSPECIFIED
Czupalla, MatthiasUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Samwer, KonradUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:December 2016
Journal or Publication Title:npj Microgravity
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:2
DOI:10.1038/s41526-016-0007-3
Page Range:pp. 1-9
Publisher:Nature Publishing Group
ISSN:2373-8065
Status:Published
Keywords:liquid SiGe semiconductors, thermophysical properties, microgravity, parabolic flight
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Research under Space Conditions
DLR - Research area:Raumfahrt
DLR - Program:R FR - Research under Space Conditions
DLR - Research theme (Project):R - Vorhaben Materialforschung unter Mikro-g (old)
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Physics in Space
Deposited By: Lohöfer, Georg
Deposited On:02 Jan 2017 07:13
Last Modified:17 Nov 2018 05:02

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