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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Zhukavin, R.Kh. and Kovalevsky, K. A. and Orlov, M.L. and Tsyplenkov, V.V. and Hübers, Heinz-Wilhelm and Deßmann, Nils and Kozlov, D. V. and Shastin, V.N. (2016) Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon. Semiconductors, 50 (11), pp. 1458-1462. Springer. DOI: 10.1134/S1063782616110270 ISSN 1063-7826

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Official URL: https://link.springer.com/article/10.1134/S1063782616110270

Abstract

Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO2 laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A+ centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

Item URL in elib:https://elib.dlr.de/107659/
Document Type:Article
Title:Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Kovalevsky, K. A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Orlov, M.L.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Deßmann, NilsNils.Dessmann (at) dlr.deUNSPECIFIED
Kozlov, D. V.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:10 May 2016
Journal or Publication Title:Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:50
DOI :10.1134/S1063782616110270
Page Range:pp. 1458-1462
Publisher:Springer
ISSN:1063-7826
Status:Published
Keywords:THz, Stimulated emission, Silicon, Laser
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Deßmann, Nils
Deposited On:11 Nov 2016 11:48
Last Modified:01 Dec 2018 19:52

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