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Raman scattering at terahertz frequencies enabled by an infrared free electron laser.

Pavlov, S.G. and Deßmann, N. and Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm and Pohl, Andreas and Redlich, B. and van der Meer, A. F. G. and Winnerl, S. and Schneider, H. and Ortega, J.-M. and Prazeres, R. and Abrosimov, Nickolay (2016) Raman scattering at terahertz frequencies enabled by an infrared free electron laser. the International Conference "Synchrotron and Free electron laser Radiation: Generation and application", 2016-07-04 - 2016-07-07, Novosibirsk, Russia.

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Abstract

In the last decade the use of infrared free electron laser facilities enabled observation of inelastic light (Raman) scattering in THz frequency range. Raman-active intracenter donor transitions in silicon fall into the THz range and serve as outgoing resonances in electronic Stokes scattering. At photon fluxes above 1E24 photon/cm2/s donor-related Raman stimulated emission occurs in the range 4.2-6.5 THz from natural and isotopically enriched silicon crystals with various dopants while the free electron laser wavelength was varied between 18 and 41 μm (7.5-16.5 THz). Study of dynamics of the observed emission shows a transient picosecond-micropulse mode that indicates on significantly larger Raman gain realized in THz Raman silicon lasers.

Item URL in elib:https://elib.dlr.de/106508/
Document Type:Conference or Workshop Item (Speech)
Title:Raman scattering at terahertz frequencies enabled by an infrared free electron laser.
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIEDUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIEDUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIEDUNSPECIFIED
Pohl, Andreasa.pohl (at) dlr.dehttps://orcid.org/0009-0005-5091-6476UNSPECIFIED
Redlich, B.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
van der Meer, A. F. G.FELIX Facility, Radboud University NijmegenUNSPECIFIEDUNSPECIFIED
Winnerl, S.s.winnerl (at) hzdr.deUNSPECIFIEDUNSPECIFIED
Schneider, H.FZD, RossendorfUNSPECIFIEDUNSPECIFIED
Ortega, J.-M.CLIO, Université de Paris Sud, Laboratoire de Chimie Physique, Orsay, FranceUNSPECIFIEDUNSPECIFIED
Prazeres, R.CLIO, Université de Paris Sud, Laboratoire de Chimie Physique, Orsay, FranceUNSPECIFIEDUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Date:2016
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 6-7
Status:Published
Keywords:FEL, Raman, THz
Event Title:the International Conference "Synchrotron and Free electron laser Radiation: Generation and application"
Event Location:Novosibirsk, Russia
Event Type:international Conference
Event Start Date:4 July 2016
Event End Date:7 July 2016
Organizer:Budker Institute of Nuclear Physics SB RAS
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Vorhaben OptoRob (old), R - Optical Technologies and Applications
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:11 Oct 2016 07:00
Last Modified:24 Apr 2024 20:11

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