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FEL-based study of intervalley elastic scattering of donor excited states in multivalley semiconductors.

Shastin, V.N. and Zhukavin, R.Kh. and Tsyplenkov, V.V. and Kovalevsky, K. A. and Hübers, Heinz-Wilhelm and Pavlov, S.G. and Deßmann, N. (2016) FEL-based study of intervalley elastic scattering of donor excited states in multivalley semiconductors. International Conference "Synchrotron and Free electron laser Radiation: Generation and application", 2016-07-04 - 2016-07-07, Novosibirsk, Russia.

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Abstract

FEL-based optical pump-probe technique is usually applied for study of highly non-equilibrium electrons in semiconductors and in particularly for the relaxation of donor or acceptor bound excited states. Here we are focused on intervalley elastic scattering that is typical for donors in silicon crystal. As shown such process results in an additional feature in a pump-probe response that has been ignored so far in the interpretation of data obtained using FELIX and FELBE free electron lasers. On the other hand the knowledge on the elastic intervalley scattering is also important from physical point of view.

Item URL in elib:https://elib.dlr.de/106507/
Document Type:Conference or Workshop Item (Speech)
Title:FEL-based study of intervalley elastic scattering of donor excited states in multivalley semiconductors.
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIEDUNSPECIFIED
Kovalevsky, K. A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIEDUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIEDUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIEDUNSPECIFIED
Date:2016
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 72-73
Status:Published
Keywords:FEL, semiconductors, ultrafast processes
Event Title:International Conference "Synchrotron and Free electron laser Radiation: Generation and application"
Event Location:Novosibirsk, Russia
Event Type:international Conference
Event Start Date:4 July 2016
Event End Date:7 July 2016
Organizer:Budker Institute of Nuclear Physics SB RAS
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Vorhaben OptoRob (old), R - Optical Technologies and Applications
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:11 Oct 2016 07:01
Last Modified:24 Apr 2024 20:11

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