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Carrier dynamics in doped Ge measured at the free electron laser facility FELBE

Deßmann, Nils and Pavlov, S.G. and Pohl, Andreas and Winnerl, S. and Abrosimov, Nickolay and Zhukavin, R.Kh. and Tsyplenkov, V.V. and Shengurov, D.V. and Shastin, V.N. and Hübers, Heinz-Wilhelm (2016) Carrier dynamics in doped Ge measured at the free electron laser facility FELBE. In: SFR 2016 Book of Abstracts, p. 64. Budker INP. Synchrotron and Free electron laser Radiation: generation and application (SFR 2016), 4.-7. Juli 2016, Nowosibirsk, Russland.

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Abstract

Cooled germanium (Ge) photoconductive detectors are one of the most sensitive detectors at terahertz (THz) frequencies. They are widely used in laboratory spectroscopy and imaging experiments. The speed of a Ge photoconductive detector is set by technical limitations such as the bias circuit, the geometry of the detector crystal and the electric field applied to the .detector. The recovery speed of the detector material is, however, fundamentally limited only by the lifetimes of the intraband relaxation of the free charge carriers within the valence or conduction band and by band-to-impurity relaxation (capture) down to the impurity ground state. Therefore, capture and intraband relaxation processes have been measured for different dopants in uncompensated and compensated n- and p-type Ge by a pump-probe technique at the free electron laser facility FELBE.

Item URL in elib:https://elib.dlr.de/105880/
Document Type:Conference or Workshop Item (Speech)
Title:Carrier dynamics in doped Ge measured at the free electron laser facility FELBE
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Deßmann, NilsNils.Dessmann (at) dlr.deUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Pohl, Andreasa.pohl (at) dlr.deUNSPECIFIED
Winnerl, S.s.winnerl (at) hzdr.deUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Shengurov, D.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:6 July 2016
Journal or Publication Title:SFR 2016 Book of Abstracts
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:p. 64
Publisher:Budker INP
Status:Published
Keywords:THz, Free electron laser, Pump Probe, Germanium, Dynamics
Event Title:Synchrotron and Free electron laser Radiation: generation and application (SFR 2016)
Event Location:Nowosibirsk, Russland
Event Type:international Conference
Event Dates:4.-7. Juli 2016
Organizer:Budker INP
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Earth Observation
DLR - Research area:Raumfahrt
DLR - Program:R EO - Erdbeobachtung
DLR - Research theme (Project):R - Vorhaben Optische Technologien und Anwendungen, R - Vorhaben OptoRob
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Deßmann, Nils
Deposited On:05 Sep 2016 08:11
Last Modified:31 Jul 2019 20:03

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