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Terahertz gain on shallow donor transitions in silicon

Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm and Pavlov, S.G. and Hovenier, J.N. and Klaassen, T.O. and van der Meer, A.F.G. (2007) Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics, 102, 093104-1-093104-5. American Institute of Physics. DOI: 10.1063/1.2804756. ISSN 0021-8979.

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Abstract

Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO<sub>2</sub> laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0→1sE, 2p0→1sT2 transitions in Si:P and the 2p±→1sE transition in Si:Bi. Pumping with a CO<sub>2</sub> laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0→1sT2 of Si:P transition. The gain for intracenter pumping is in the range 5−10 cm−1 while for photoexcitation the gain is considerably less, namely 0.5 cm−1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations. © 2007 American Institute of Physics. DOI: 10.1063/1.2804756

Document Type:Article
Title:Terahertz gain on shallow donor transitions in silicon
Authors:
AuthorsInstitution or Email of Authors
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nishni Novgorod, Russia
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nishni Novgorod, Russia
Hübers, Heinz-WilhelmUNSPECIFIED
Pavlov, S.G.UNSPECIFIED
Hovenier, J.N.Kavli Institute of Nanoscience Delft, The Netherlands
Klaassen, T.O.Kavli Institute of Nanoscience Delft, The Netherlands
van der Meer, A.F.G.FOM-Institute for Plasma Physics, Nieuwegen, The Netherlands
Date:2007
Journal or Publication Title:Journal of Applied Physics
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:102
DOI:10.1063/1.2804756
Page Range:093104-1-093104-5
Publisher:American Institute of Physics
ISSN:0021-8979
Status:Published
Keywords:THz, Laser, Silicon
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Heinz-Wilhelm Hübers
Deposited On:12 Nov 2007
Last Modified:27 Apr 2009 14:28

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