Raman investigations of GaN films grown by pulsed laser deposition
Klose, M. and Dassow, R. and Gross, M. and Schröder, H. (1998) Raman investigations of GaN films grown by pulsed laser deposition. Journal of Crystal Growth, 189/190, pp. 666-671.
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GaN expitaxial films grown by pulsed laser deposition have been investigated by Raman scattering measurements. Room temperature electron concentrations and mobilities of films grown on 6H-SiC were estimated by A1(LO) mode analyses according to the theory of plasmon-coupled modes yielding values of about n=5xE+16cm^-3 and my=550cm^2/V.s, respectively. The Raman microprobe has served to explore the homogeneity of the films with respect to distributions of the residual strain and carrier concentration.
|Title:||Raman investigations of GaN films grown by pulsed laser deposition|
|Journal or Publication Title:||Journal of Crystal Growth|
|In ISI Web of Science:||Yes|
|Page Range:||pp. 666-671|
|Keywords:||Pulsed laser deposition, Raman scattering, electron concentration and mobilities.|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:35|
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