Klose, M. and Dassow, R. and Gross, M. and Schröder, H. (1998) Raman investigations of GaN films grown by pulsed laser deposition. Journal of Crystal Growth, 189/190, pp. 666-671.
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GaN expitaxial films grown by pulsed laser deposition have been investigated by Raman scattering measurements. Room temperature electron concentrations and mobilities of films grown on 6H-SiC were estimated by A1(LO) mode analyses according to the theory of plasmon-coupled modes yielding values of about n=5xE+16cm^-3 and my=550cm^2/V.s, respectively. The Raman microprobe has served to explore the homogeneity of the films with respect to distributions of the residual strain and carrier concentration.
|Title:||Raman investigations of GaN films grown by pulsed laser deposition|
|Journal or Publication Title:||Journal of Crystal Growth|
|In ISI Web of Science:||Yes|
|Page Range:||pp. 666-671|
|Keywords:||Pulsed laser deposition, Raman scattering, electron concentration and mobilities.|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||other|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 13:35|
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