Stress analysis of ultra-thin silicon chip-onfoil electronic assembly under bending

Kurzfassung

In this paper we investigate the bending-induced uniaxial stress at the top of ultra-thin (thickness ⩽20 μm) single-crystal silicon (Si) chips adhesively attached with the aid of an epoxy glue to soft polymeric substrate through combined theoretical and experimental methods. Stress is first determined analytically and numerically using dedicated models. The theoretical results are validated experimentally through piezoresistive measurements performed on complementary metal-oxide-semiconductor (CMOS) transistors built on specially designed chips, and through micro-Raman spectroscopy investigation. Stress analysis of strained ultra-thin chips with CMOS circuitry is crucial, not only for the accurate evaluation of the piezoresistive behavior of the builtin devices and circuits, but also for reliability and deformability analysis. The results reveal an uneven bending-induced stress distribution at the top of the Si-chip that decreases from the central area towards the chipʼs edges along the bending direction, and increases towards the other edges. Near these edges, stress can reach very high values, facilitating the emergence of cracks causing ultimate chip failure.