Shastin, Valery und Zhukavin, Roman und Kovalevsky, Konstantin und Tsyplenkov, Veniamin und Pavlov, Sergey und Hübers, Heinz-Wilhelm (2008) THz lasing of shallow donors in stressed silicon crystals. In: 4th International Conference on Advanced Optoelectronics and Lasers, Seiten 254-256. Institute of Electrical and Electronics Engineers. CAOL 2008 (4. Annual Conference), 2008-09-29 - 2008-10-04, Alushta (Ukraine). ISBN 978-1-4244-1974-6.
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Kurzfassung
Results of experimental and theoretical study of terahertz stimulated emission from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in uniaxially stressed and liquid helium cooled silicon crystal are summarized and discussed. It is shown that compressive force of 1-1.5 kbar for P, Sb and of 2-3 kbar for As, Bi applied along {100} crystallographic orientations results in the remarkable enhancement of the laser gain as well as THz emission efficiency and laser threshold intensity is decreased by the order of magnitude or even more. For As and Bi donors it is accompanied by a switching of the emission line because of the upper laser state change. The effect of uniaxial stress on donor lasing originates from energy shift of the conduction band valleys of silicon which split donor states changing their eigen-values and eigenfunctions. According to the calculations of phonon-assisted relaxation rates appropriate stress-induced donor modification increases the lifetime and makes pump efficiency of the upper laser states better. Thus THz laser performance of donors in silicon can be substantially improved by host crystal deformation.
elib-URL des Eintrags: | https://elib.dlr.de/55922/ | ||||||||||||||||||||||||||||
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Dokumentart: | Konferenzbeitrag (Vortrag) | ||||||||||||||||||||||||||||
Titel: | THz lasing of shallow donors in stressed silicon crystals | ||||||||||||||||||||||||||||
Autoren: |
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Datum: | September 2008 | ||||||||||||||||||||||||||||
Erschienen in: | 4th International Conference on Advanced Optoelectronics and Lasers | ||||||||||||||||||||||||||||
Referierte Publikation: | Nein | ||||||||||||||||||||||||||||
Open Access: | Nein | ||||||||||||||||||||||||||||
Gold Open Access: | Nein | ||||||||||||||||||||||||||||
In SCOPUS: | Nein | ||||||||||||||||||||||||||||
In ISI Web of Science: | Nein | ||||||||||||||||||||||||||||
Seitenbereich: | Seiten 254-256 | ||||||||||||||||||||||||||||
Verlag: | Institute of Electrical and Electronics Engineers | ||||||||||||||||||||||||||||
ISBN: | 978-1-4244-1974-6 | ||||||||||||||||||||||||||||
Status: | veröffentlicht | ||||||||||||||||||||||||||||
Stichwörter: | silicon lasers, stressed lasers | ||||||||||||||||||||||||||||
Veranstaltungstitel: | CAOL 2008 (4. Annual Conference) | ||||||||||||||||||||||||||||
Veranstaltungsort: | Alushta (Ukraine) | ||||||||||||||||||||||||||||
Veranstaltungsart: | internationale Konferenz | ||||||||||||||||||||||||||||
Veranstaltungsbeginn: | 29 September 2008 | ||||||||||||||||||||||||||||
Veranstaltungsende: | 4 Oktober 2008 | ||||||||||||||||||||||||||||
Veranstalter : | IEEE Lasers and Electro-Optics Society (LEOS) | ||||||||||||||||||||||||||||
HGF - Forschungsbereich: | Verkehr und Weltraum (alt) | ||||||||||||||||||||||||||||
HGF - Programm: | Weltraum (alt) | ||||||||||||||||||||||||||||
HGF - Programmthema: | W EW - Erforschung des Weltraums | ||||||||||||||||||||||||||||
DLR - Schwerpunkt: | Weltraum | ||||||||||||||||||||||||||||
DLR - Forschungsgebiet: | W EW - Erforschung des Weltraums | ||||||||||||||||||||||||||||
DLR - Teilgebiet (Projekt, Vorhaben): | W - Projekt SOFIA (alt) | ||||||||||||||||||||||||||||
Standort: | Berlin-Adlershof | ||||||||||||||||||||||||||||
Institute & Einrichtungen: | Institut für Planetenforschung > Terahertz- und Infrarotsensorik | ||||||||||||||||||||||||||||
Hinterlegt von: | Pavlov, Dr. Sergey | ||||||||||||||||||||||||||||
Hinterlegt am: | 25 Nov 2008 | ||||||||||||||||||||||||||||
Letzte Änderung: | 24 Apr 2024 19:20 |
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