Deuterium Retention in Silicon Carbide Materials

Kurzfassung

Silicon Carbide (SiC) is a low Z material discussed as an alternative to graphite for fusion devices. The retention of hydrogenous species is an important plasma-surface interaction property. Deuterium was implanted into SiC, SiCf/SiC, Cf/C-SiC and SiC coated graphite under various particle energy and substrate temperature conditions. A TDS process was used to characterise the deuterium retention of the implanted specimens. While all SiC materials show elevated retention levels compared to graphite, the differences are limited to about a factor of two over the range of parameters investigated.