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Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe

Lynch, S. A. and Matmon, G. and Pavlov, S. G. and Litvinenko, K. L. and Redlich, B. and van der Meer, A: F. G. and Abrosimov, N.V. and Hübers, H.-W. (2010) Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe. Physical Review B, 82 (24), pp. 1-7. DOI: 10.1103/PhysRevB.82.245206.

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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.82.245206

Abstract

The origins of line broadening in the far-infrared spectrum of phosphorus donors in SiGe are investigated. Using a combination of Fourier transform infrared FT-IR spectroscopy and time-resolved pump-probe measurements, we show that the line shapes are dominated by inhomogenous broadening. Experimental FT-IR absorbance spectra measured in the temperature range 6–150 K are presented for three different Ge contents. Additional spectra of pure phosphorus doped silicon recorded under similar experimental conditions are presented and compared with the SiGe results. We propose a simple quantitative model to simulate the line broadening in our experimental spectra. Our model takes into account the compositional variations in the random SiGe binary alloy and its effect on the permittivity of the environment around each donor. We also show that the addition of small amounts Ge to Si single crystals has little detrimental effect on the lifetime of the excited infrared electronic energy levels, despite the observed line broadening.

Document Type:Article
Title:Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe
Authors:
AuthorsInstitution or Email of Authors
Lynch, S. A. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
Matmon, G. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
Pavlov, S. G. Sergeij.Pavlov@dlr.de
Litvinenko, K. L. Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom
Redlich, B.FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands
van der Meer, A: F. G.FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands
Abrosimov, N.V.Leibniz Institute of Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
Hübers, H.-W.Institut für Optik und Atomare Physik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
Date:December 2010
Journal or Publication Title:Physical Review B
Refereed publication:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:82
DOI:10.1103/PhysRevB.82.245206
Page Range:pp. 1-7
Status:Published
Keywords:terahertz, laser, silicon, germanium, life time, impurity
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Ulrike Stiebeler
Deposited On:14 Jan 2011 10:38
Last Modified:26 Mar 2013 13:26

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