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Stress-controlled phonon-impurity resonances in terahertz silicon lasers

Pavlov, S. G. (2009) Stress-controlled phonon-impurity resonances in terahertz silicon lasers. Material Research Society. MRS Fall Meeting 2009, 30 Nov - 4 Dec 2009, Boston, USA.

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Abstract

Optically pumped terahertz silicon lasers utilize transitions between shallow donor states at low lattice temperatures. Population inversion in these lasers is built-up due to selective relaxation routes of optically excited electrons into impurity ground state. Each relaxation step of the electron occurs under assistance of intervalley and intravalley phonons with energies approaching the particular energy gaps between interacting excited donor states. These impurity phonon interactions determine, at the end, the lifetimes of the laser levels, and, therefore, efficiency of intracenter silicon lasers. Deformation of silicon crystal is a classical example of controllable influence on energy spectrum of shallow donor levels due to specific splitting and shifts of conduction band valleys. Using moderate (up to 3MPa) external uniaxial deformation of a crystal, one can radically modify the impurity spectra while the phononic spectra remain almost unchanged. We have demonstrated significant improvement of efficiency for intracenter silicon lasers followed by changes of lifetime for the upper and the lower laser levels due to moving the impurity levels either into or out of resonance with corresponding intervalley phonon frequencies. Due to nonlinearity of the stress-induced energy shifts of donor states involved in laser action, frequency tunability under external stress can be achieved for some laser mechanisms.

Document Type:Conference or Workshop Item (Speech)
Title:Stress-controlled phonon-impurity resonances in terahertz silicon lasers
Authors:
AuthorsInstitution or Email of Authors
Pavlov, S. G.UNSPECIFIED
Date:2009
Page Range:p. 659941
Publisher:Material Research Society
Status:Published
Keywords:terahertz silicon lasers
Event Title:MRS Fall Meeting 2009
Event Location:Boston, USA
Event Type:international Conference
Event Dates:30 Nov - 4 Dec 2009
Organizer:Material Research Society
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:05 Jan 2010 19:56
Last Modified:05 Jan 2010 19:56

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