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Stress-controlled phonon-impurity resonances in terahertz silicon lasers

Pavlov, S. G. (2009) Stress-controlled phonon-impurity resonances in terahertz silicon lasers. Material Research Society. MRS Fall Meeting 2009, 30 Nov - 4 Dec 2009, Boston, USA.

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Kurzfassung

Optically pumped terahertz silicon lasers utilize transitions between shallow donor states at low lattice temperatures. Population inversion in these lasers is built-up due to selective relaxation routes of optically excited electrons into impurity ground state. Each relaxation step of the electron occurs under assistance of intervalley and intravalley phonons with energies approaching the particular energy gaps between interacting excited donor states. These impurity phonon interactions determine, at the end, the lifetimes of the laser levels, and, therefore, efficiency of intracenter silicon lasers. Deformation of silicon crystal is a classical example of controllable influence on energy spectrum of shallow donor levels due to specific splitting and shifts of conduction band valleys. Using moderate (up to 3MPa) external uniaxial deformation of a crystal, one can radically modify the impurity spectra while the phononic spectra remain almost unchanged. We have demonstrated significant improvement of efficiency for intracenter silicon lasers followed by changes of lifetime for the upper and the lower laser levels due to moving the impurity levels either into or out of resonance with corresponding intervalley phonon frequencies. Due to nonlinearity of the stress-induced energy shifts of donor states involved in laser action, frequency tunability under external stress can be achieved for some laser mechanisms.

Dokumentart:Konferenzbeitrag (Vortrag)
Titel:Stress-controlled phonon-impurity resonances in terahertz silicon lasers
Autoren:
AutorenInstitution oder E-Mail-Adresse der Autoren
Pavlov, S. G.NICHT SPEZIFIZIERT
Datum:2009
Seitenbereich:Seite 659941
Verlag:Material Research Society
Status:veröffentlicht
Stichwörter:terahertz silicon lasers
Veranstaltungstitel:MRS Fall Meeting 2009
Veranstaltungsort:Boston, USA
Veranstaltungsart:internationale Konferenz
Veranstaltungsdatum:30 Nov - 4 Dec 2009
Veranstalter :Material Research Society
HGF - Forschungsbereich:Verkehr und Weltraum (alt)
HGF - Programm:Weltraum (alt)
HGF - Programmthema:W EW - Erforschung des Weltraums
DLR - Schwerpunkt:Weltraum
DLR - Forschungsgebiet:W EW - Erforschung des Weltraums
DLR - Teilgebiet (Projekt, Vorhaben):W - Projekt SOFIA (alt)
Standort: Berlin-Adlershof
Institute & Einrichtungen:Institut für Planetenforschung > Terahertz- und Infrarotsensorik
Hinterlegt von: Dr. Sergey Pavlov
Hinterlegt am:05 Jan 2010 19:56
Letzte Änderung:05 Jan 2010 19:56

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