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THz lasing of shallow donors in stressed silicon crystals

Shastin, Valery and Zhukavin, Roman and Kovalevsky, Konstantin and Tsyplenkov, Veniamin and Pavlov, Sergey and Hübers, Heinz-Wilhelm (2008) THz lasing of shallow donors in stressed silicon crystals. In: 4th International Conference on Advanced Optoelectronics and Lasers, pp. 254-256. Institute of Electrical and Electronics Engineers. CAOL 2008 (4. Annual Conference), [2008-09-29 - 2008-10-04], Alushta (Ukraine). ISBN 978-1-4244-1974-6.

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Abstract

Results of experimental and theoretical study of terahertz stimulated emission from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in uniaxially stressed and liquid helium cooled silicon crystal are summarized and discussed. It is shown that compressive force of 1-1.5 kbar for P, Sb and of 2-3 kbar for As, Bi applied along {100} crystallographic orientations results in the remarkable enhancement of the laser gain as well as THz emission efficiency and laser threshold intensity is decreased by the order of magnitude or even more. For As and Bi donors it is accompanied by a switching of the emission line because of the upper laser state change. The effect of uniaxial stress on donor lasing originates from energy shift of the conduction band valleys of silicon which split donor states changing their eigen-values and eigenfunctions. According to the calculations of phonon-assisted relaxation rates appropriate stress-induced donor modification increases the lifetime and makes pump efficiency of the upper laser states better. Thus THz laser performance of donors in silicon can be substantially improved by host crystal deformation.

Document Type:Conference or Workshop Item (Speech)
Title:THz lasing of shallow donors in stressed silicon crystals
Authors:
AuthorsInstitution or Email of Authors
Shastin, ValeryInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Zhukavin, RomanInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Kovalevsky, KonstantinInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Tsyplenkov, VeniaminInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Pavlov, SergeyUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Date:September 2008
Journal or Publication Title:4th International Conference on Advanced Optoelectronics and Lasers
Refereed publication:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 254-256
Publisher:Institute of Electrical and Electronics Engineers
ISBN:978-1-4244-1974-6
Status:Published
Keywords:silicon lasers, stressed lasers
Event Title:CAOL 2008 (4. Annual Conference)
Event Location:Alushta (Ukraine)
Event Type:international Conference
Event Dates:[2008-09-29 - 2008-10-04]
Organizer:IEEE Lasers and Electro-Optics Society (LEOS)
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:25 Nov 2008
Last Modified:15 Jan 2010 00:21

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