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Ultrashort pulse damage of semiconductors

Hüttner, Bernd (2003) Ultrashort pulse damage of semiconductors. In: Proceedings of SPIE, 5273, pp. 493-499. SPIE. 35th ANNUAL BOULDER DAMAGE SYMPOSIUM, 2003-09-22 - 2003-09-24, BOULDER; COLORADO (USA). ISBN 0-8194-5163-0. ISSN 0277-786X

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Abstract

First, we give a briefly critically discuss the existing definitions of melting and damage thresholds and the different kinds of experimental determinations of the thresholds. Then we investigate the thermal and athermal melting of oxides (wide-band gap semiconductors) and of silicon by solv-ing a rate equation for the excited electrons and a by complete self-consistent solution of a coupled system of differential equations for the electron density and for the electron and phonon temperatures. In particular, we direct our attention to the still open question about the value for the critical electron density in the case of athermal melting.

Document Type:Conference or Workshop Item (Speech, Paper)
Title:Ultrashort pulse damage of semiconductors
Authors:
AuthorsInstitution or Email of Authors
Hüttner, BerndUNSPECIFIED
Date:2003
Journal or Publication Title:Proceedings of SPIE
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:5273
Page Range:pp. 493-499
Publisher:SPIE
Series Name:LASER INDUCED DAMAGE IN OPTICAL MATERIALS
ISSN:0277-786X
ISBN:0-8194-5163-0
Keywords:melting threshold, semiconductor, laser pulse duration, fs-range
Event Title:35th ANNUAL BOULDER DAMAGE SYMPOSIUM
Event Location:BOULDER; COLORADO (USA)
Event Type:international Conference
Event Dates:2003-09-22 - 2003-09-24
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Aeronautics
HGF - Program Themes:Aircraft Research
DLR - Research area:Aeronautics
DLR - Program:L AR - Aircraft Research
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: Dr.rer.nat. Bernd Hüttner
Deposited On:09 Feb 2006
Last Modified:14 Jan 2010 20:53

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