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Fs-laser pulse damage of semiconductors

Hüttner, Bernd (2004) Fs-laser pulse damage of semiconductors. In: Proceedings of SPIE, 5448, pp. 928-934. SPIE. High Power Laser Ablation V, 2004-04-25 - 2004-04-30, Taos, NM (USA). ISBN 0-8194-5371-4. ISSN 0277-786X

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Abstract

We begin with a brief critical discussion of the existing definitions of melting and damage thresholds and the different kinds of experimental determinations of the thresholds. Then we investigate the thermal and athermal melting of a wide-band gap semiconductor (SiO2) and of silicon by two different methods consisting of a rate equation for the excited electrons and of a complete self-consistent solution of a coupled system of differential equations for the electron density and for the electron and phonon temperatures. In par-ticular, we focus on the role of the critical electron density in the case of athermal melting. Our calculations suggest that this is determined by the critical plasma density. Finally, we conclude with a discussion of the benefits and drawbacks of the two approaches.

Document Type:Conference or Workshop Item (Paper, Poster)
Title:Fs-laser pulse damage of semiconductors
Authors:
AuthorsInstitution or Email of Authors
Hüttner, BerndUNSPECIFIED
Date:2004
Journal or Publication Title:Proceedings of SPIE
Refereed publication:Yes
In ISI Web of Science:No
Volume:5448
Page Range:pp. 928-934
Publisher:SPIE
Series Name:High-Power Laser Ablation
ISSN:0277-786X
ISBN:0-8194-5371-4
Status:Published
Keywords:melting threshold, semiconductor, laser pulse duration, fs-range, critical density
Event Title:High Power Laser Ablation V
Event Location:Taos, NM (USA)
Event Type:international Conference
Event Dates:2004-04-25 - 2004-04-30
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Aeronautics
HGF - Program Themes:Aircraft Research
DLR - Research area:Aeronautics
DLR - Program:L AR - Aircraft Research
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: Dr.rer.nat. Bernd Hüttner
Deposited On:09 Feb 2006
Last Modified:14 Jan 2010 20:53

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