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Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy

Zhou, H. and Phillipp, F. and Gross, M. and Schröder, H. (1999) Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy. Materials Science & Engineering, B68, pp. 26-34.

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Abstract

Transmission electron microscopy (TEM) studies have been performed on GaN epitaxial films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy (LIMBE). Similar types of threading discolactions are formed in the GaN epilayers but with different dislocation densities. They have edge, mixed and screw type of Burgers vectors, predominantly the first type. In addition to threading dislocations, inversion domain boundaries are found in the GaN epilayer grown on sapphire. The results suggest that the inversion domain boundaries have Ga-N bonds between domains and the adjacent matrix without displacements along the c-axis in the basal planes.

Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Authors:
AuthorsInstitution or Email of Authors
Zhou, H.UNSPECIFIED
Phillipp, F.UNSPECIFIED
Gross, M.UNSPECIFIED
Schröder, H.UNSPECIFIED
Date:1999
Journal or Publication Title:Materials Science & Engineering
Refereed publication:No
In SCOPUS:No
In ISI Web of Science:No
Volume:B68
Page Range:pp. 26-34
Status:Published
Keywords:Gallium nitride, transmission electron microscopy, laser induced molecular beam epitaxy.
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:34

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