Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Zhou, H. and Phillipp, F. and Gross, M. and Schröder, H. (1999) Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy. Materials Science & Engineering, B68, pp. 26-34.
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Transmission electron microscopy (TEM) studies have been performed on GaN epitaxial films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy (LIMBE). Similar types of threading discolactions are formed in the GaN epilayers but with different dislocation densities. They have edge, mixed and screw type of Burgers vectors, predominantly the first type. In addition to threading dislocations, inversion domain boundaries are found in the GaN epilayer grown on sapphire. The results suggest that the inversion domain boundaries have Ga-N bonds between domains and the adjacent matrix without displacements along the c-axis in the basal planes.
|Title:||Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy|
|Journal or Publication Title:||Materials Science & Engineering|
|In ISI Web of Science:||No|
|Page Range:||pp. 26-34|
|Keywords:||Gallium nitride, transmission electron microscopy, laser induced molecular beam epitaxy.|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:34|
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