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Far-infrared stimulated emission from optically excited bismuth donors in silicon

Pavlov, S.G. and Hübers, H.-W. and Rümmeli, M.H. and Zhukavin, R.Kh. Russian Academy of Sciences, Nizhny Novgorod), and Orlova, E.E. and Shastin, V.N. and Riemann, H. (2002) Far-infrared stimulated emission from optically excited bismuth donors in silicon. Applied Physics Letters, 80 (25), pp. 4717-4719.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=2002,
Title:Far-infrared stimulated emission from optically excited bismuth donors in silicon
Authors:
AuthorsInstitution or Email of Authors
Pavlov, S.G.UNSPECIFIED
Hübers, H.-W.UNSPECIFIED
Rümmeli, M.H.UNSPECIFIED
Zhukavin, R.Kh. Russian Academy of Sciences, Nizhny Novgorod), UNSPECIFIED
Orlova, E.E.Russian Academy of Sciences, Nizhny Novgorod
Shastin, V.N.Russian Academy of Sciences, Nizhny Novgorod
Riemann, H.Institute of Crystal Growth, Berlin
Date:2002
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:80
Page Range:pp. 4717-4719
Status:Published
Keywords:Terahertz, Silizium, Laser, Ferninfrarot, shallow levels
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 19:05

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