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Terahertz lasers based on shallow impurities in silicon and germanium

Pavlov, S.G. (2011) Terahertz lasers based on shallow impurities in silicon and germanium. Habilitation, DLR Institut für Planetenforschung, Berlin and Institute for Physics of Microstructures, RAS, N. Novgorod.

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Kurzfassung

Different principles to generate stimulated emission from semiconductors in the terahertz frequency range are being under intense research nowadays due to prospective compact low-consuming devices for diverse applications in solid-state spectroscopy, radio astronomy, security control, communication techniques. Silicon-based semiconductors offer low optical loss and high thermal conductivity for broad-band terahertz laser media. These can be used, for instance in the range between 5 and 7 THz where GaAs-based quantum cascade lasers suffer from significant lattice absorption. Recently optically pumped germanium and silicon lasers operating on transitions between particular impurity levels as well as intracenter Raman silicon laser have been realized and thoroughly investigated towards their operational limits. Different laser schemes realized for the 1-7 THz terahertz frequency range will be discussed with emphasis on physical principals of the lasers. These approaches have demonstrated for the first time the potential of principle phonons for intersubband and intracenter laser mechanisms. The realization of intracenter lasers demonstrates the possibility of using different principle phonons in semiconductors for generation of stimulated emission in the mid- and far-infrared wavelength range.

Dokumentart:Hochschulschrift (Habilitation)
Zusätzliche Informationen:Dates: defence on 1.7.2010 (State Dissertation Committee in the Institute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, Russia); approved on 21.1.2011 (Russian State Committee on PhD and Dr.Sc. Dissertations, Moscow, Russia). Sertificate DDN 015750.
Titel:Terahertz lasers based on shallow impurities in silicon and germanium
Autoren:
AutorenInstitution oder E-Mail-AdresseAutoren-ORCID
Pavlov, S.G.sergeij.pavlov@dlr.deNICHT SPEZIFIZIERT
Datum:21 Januar 2011
In Open Access:Nein
In SCOPUS:Nein
In ISI Web of Science:Nein
Seitenanzahl:217
Status:nicht veröffentlicht
Stichwörter:terahertz semiconductor laser
Institution:DLR Institut für Planetenforschung, Berlin and Institute for Physics of Microstructures, RAS, N. Novgorod
HGF - Forschungsbereich:Luftfahrt, Raumfahrt und Verkehr
HGF - Programm:Verkehr
HGF - Programmthema:Verkehrsmanagement
DLR - Schwerpunkt:Verkehr
DLR - Forschungsgebiet:V VM - Verkehrsmanagement
DLR - Teilgebiet (Projekt, Vorhaben):V - FAMOUS 2 (alt)
Standort: Berlin-Adlershof
Institute & Einrichtungen:Institut für Planetenforschung > Terahertz- und Infrarotsensorik
Hinterlegt von: Pavlov, Dr. Sergey
Hinterlegt am:16 Jan 2012 09:22
Letzte Änderung:12 Dez 2013 21:33

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