elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Contact | Deutsch
Fontsize: [-] Text [+]

Terahertz lasers based on shallow impurities in silicon and germanium

Pavlov, S.G. (2011) Terahertz lasers based on shallow impurities in silicon and germanium. Habilitation, DLR Institut für Planetenforschung, Berlin and Institute for Physics of Microstructures, RAS, N. Novgorod.

[img] PDF - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
11MB

Official URL: http://ipmras.ru/UserFiles/Diss/Pavlov_SG.pdf

Abstract

Different principles to generate stimulated emission from semiconductors in the terahertz frequency range are being under intense research nowadays due to prospective compact low-consuming devices for diverse applications in solid-state spectroscopy, radio astronomy, security control, communication techniques. Silicon-based semiconductors offer low optical loss and high thermal conductivity for broad-band terahertz laser media. These can be used, for instance in the range between 5 and 7 THz where GaAs-based quantum cascade lasers suffer from significant lattice absorption. Recently optically pumped germanium and silicon lasers operating on transitions between particular impurity levels as well as intracenter Raman silicon laser have been realized and thoroughly investigated towards their operational limits. Different laser schemes realized for the 1-7 THz terahertz frequency range will be discussed with emphasis on physical principals of the lasers. These approaches have demonstrated for the first time the potential of principle phonons for intersubband and intracenter laser mechanisms. The realization of intracenter lasers demonstrates the possibility of using different principle phonons in semiconductors for generation of stimulated emission in the mid- and far-infrared wavelength range.

Document Type:Thesis (Habilitation)
Additional Information:Dates: defence on 1.7.2010 (State Dissertation Committee in the Institute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, Russia); approved on 21.1.2011 (Russian State Committee on PhD and Dr.Sc. Dissertations, Moscow, Russia). Sertificate DDN 015750.
Title:Terahertz lasers based on shallow impurities in silicon and germanium
Authors:
AuthorsInstitution or Email of Authors
Pavlov, S.G.sergeij.pavlov@dlr.de
Date:21 January 2011
Number of Pages:217
Status:Unpublished
Keywords:terahertz semiconductor laser
Institution:DLR Institut für Planetenforschung, Berlin and Institute for Physics of Microstructures, RAS, N. Novgorod
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:16 Jan 2012 09:22
Last Modified:12 Dec 2013 21:33

Repository Staff Only: item control page

Browse
Search
Help & Contact
Informationen
electronic library is running on EPrints 3.3.12
Copyright © 2008-2012 German Aerospace Center (DLR). All rights reserved.