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Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

Zhukavin, R. Kh. and Kovalevsky, K. A. and Tsyplenkov, V. V. and Shastin, V.N. and Pavlov, S. G. and Hübers, H.-W. and Riemann, H. and Abrosimov, N. V. and Ramdas, A. K. (2011) Spin-orbit coupling effect on bismuth donor lasing in stressed silicon. Applied Physics Letters, 99, p. 171108. DOI: 10.1063/1.3656023.

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Official URL: http://link.aip.org/link/doi/10.1063/1.3656023

Abstract

We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were measured versus stress applied along the [100] crystal axis. As shown, Bi donors lase at the optical transitions from the 2p+/- states to the 1s(E) state or/and to the spin-orbit split 1s(T2:G8) and 1s(T2:G7) states, and by fitting the crystal strain, one can shift the laser transitions and change the output power. The experiment is explained by the dependence of spin-orbit splitting and phonon-assisted relaxation of donor states on crystal distortion.

Document Type:Article
Title:Spin-orbit coupling effect on bismuth donor lasing in stressed silicon
Authors:
AuthorsInstitution or Email of Authors
Zhukavin, R. Kh.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Kovalevsky, K. A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Tsyplenkov, V. V.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Pavlov, S. G.sergeij.pavlov@dlr.de
Hübers, H.-W.heinz-wilhelm.huebers@dlr.de
Riemann, H.Institute of Crystal Growth, Berlin
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), Berlin
Ramdas, A. K. Purdue University, West Lafayette, USA
Date:2011
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
In Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:99
DOI:10.1063/1.3656023
Page Range:p. 171108
Status:Published
Keywords:terahertz silicon laser
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:10 Jan 2012 10:50
Last Modified:07 Feb 2013 20:47

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