Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

Zhukavin, R. Kh. and Kovalevsky, K. A. and Tsyplenkov, V. V. and Shastin, V.N. and Pavlov, S. G. and Hübers, H.-W. and Riemann, H. and Abrosimov, N. V. and Ramdas, A. K. (2011) Spin-orbit coupling effect on bismuth donor lasing in stressed silicon. Applied Physics Letters, 99, p. 171108. DOI: 10.1063/1.3656023.

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Official URL: http://link.aip.org/link/doi/10.1063/1.3656023

Abstract

We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were measured versus stress applied along the [100] crystal axis. As shown, Bi donors lase at the optical transitions from the 2p+/- states to the 1s(E) state or/and to the spin-orbit split 1s(T2:G8) and 1s(T2:G7) states, and by fitting the crystal strain, one can shift the laser transitions and change the output power. The experiment is explained by the dependence of spin-orbit splitting and phonon-assisted relaxation of donor states on crystal distortion.

Document Type:

Article

Title:

Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

Authors:

Authors	Institution or Email of Authors
Zhukavin, R. Kh.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Kovalevsky, K. A.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Tsyplenkov, V. V.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Pavlov, S. G.	sergeij.pavlov@dlr.de
Hübers, H.-W.	heinz-wilhelm.huebers@dlr.de
Riemann, H.	Institute of Crystal Growth, Berlin
Abrosimov, N. V.	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin
Ramdas, A. K.	Purdue University, West Lafayette, USA

Date:

2011

Journal or Publication Title:

Applied Physics Letters

Refereed publication:

Yes

In Open Access:

In SCOPUS:

Yes

In ISI Web of Science:

Yes

Volume:

DOI:

10.1063/1.3656023

Page Range:

p. 171108

Status:

Published

Keywords:

terahertz silicon laser

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Transport

HGF - Program Themes:

V VM - Verkehrsmanagement

DLR - Research area:

Transport

DLR - Program:

V VM - Verkehrsmanagement

DLR - Research theme (Project):

V - FAMOUS 2 (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Terahertz and Infrared Sensors

Deposited By:

Dr. Sergey Pavlov

Deposited On:

10 Jan 2012 10:50

Last Modified:

07 Feb 2013 20:47

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