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Terahertz-range stimulated emission due to electronic nonlinear frequency conversion in silicon

Pavlov, S.G. and Hübers, H.-W. and Böttger, U. and Eichholz, R. and Shastin, V.N. and Abrosimov, N.V. and Riemann, H. and Pohl, H.-J. and Redlich, B. (2010) Terahertz-range stimulated emission due to electronic nonlinear frequency conversion in silicon. In: Silicon Photonics and Photonic Integrated Circuits II (7719), 77190X-1-77190X-5. Photonics Europe 2010 Conference, 12.-15. Apr. 2010, Brussels, Belgium.

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Official URL: http://dx.doi.org/10.1117/12.854500

Abstract

active media that can be used in the range of 5-7 THz. We report on realization of the terahertz-range stimulated emission from monocrystalline natural and isotopically enriched silicon crystals doped by group-V donor centers due to nonlinear frequency conversion. Lasing in the frequency bands of 1.2 – 1.8 THz; 2.5 – 3.4 THz has been achieved from silicon crystals doped by phosphorus and in the frequency band of 4.6 – 6.4 THz from different donors under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission in high-frequency band corresponds to electronic Stokes-shifted Raman-type lasing. The low-frequency bands indicate on high-order nonlinear frequency conversion processes similar to four-wave mixing accompanied by highenergy intervalley g-phonons and f-phonons of host lattice. These lasers supplement terahertz silicon lasers operating on transitions between donor states.

Document Type:Conference or Workshop Item (Speech)
Title:Terahertz-range stimulated emission due to electronic nonlinear frequency conversion in silicon
Authors:
AuthorsInstitution or Email of Authors
Pavlov, S.G.sergeij.pavlov@dlr.de
Hübers, H.-W.heinz-wilhelm.huebers@dlr.de
Böttger, U.ute.boettger@dlr.de
Eichholz, R.rene.eichholz@dlr.de
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Abrosimov, N.V.Leibniz-Institut für Kristallzüchtung (IKZ), Berlin
Riemann, H.Leibniz-Institut für Kristallzüchtung (IKZ), Berlin
Pohl, H.-J.VITCON Projectconsult GmbH, Jena, Germany
Redlich, B.FOM Institute for Plasma Physics
Date:2010
Journal or Publication Title:Silicon Photonics and Photonic Integrated Circuits II
Page Range:77190X-1-77190X-5
Series Name:Proceedings of the SPIE
Status:Published
Keywords:Silicon laser, Terahertz, Raman laser, nonlinear frequency conversion, free electron laser
Event Title:Photonics Europe 2010 Conference
Event Location:Brussels, Belgium
Event Type:international Conference
Event Dates:12.-15. Apr. 2010
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:04 Jan 2011 21:32
Last Modified:12 Dec 2013 21:09

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