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Stress-controlled phonon-impurity resonances in terahertz silicon lasers

Pavlov, S.G. (2010) Stress-controlled phonon-impurity resonances in terahertz silicon lasers. In: Phonon Engineering for Enhanced Materials Solutions--Theory and Applications (1221E), . Material Research Society Symposium, 30. Nov.- 4. Dec. 2009, Boston, USA.

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Offizielle URL: http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=24674&DID=324711&action=detail

Kurzfassung

Optically pumped terahertz silicon lasers utilize transitions between shallow donor states at low lattice temperatures. Population inversion in these lasers is built-up due to selective relaxation routes of optically excited electrons into impurity ground state. Each relaxation step of the electron occurs under assistance of intervalley and intravalley phonons with energies approaching the particular energy gaps between interacting excited donor states. These impurity phonon interactions determine, at the end, the lifetimes of the laser levels, and, therefore, efficiency of intracenter silicon lasers. Deformation of silicon crystal is a classical example of controllable influence on energy spectrum of shallow donor levels due to specific splitting and shifts of conduction band valleys. Using moderate (up to 400 MPa) external uniaxial deformation of a crystal, one can radically modify the impurity spectra while the phononic spectra remain almost unchanged. We have demonstrated significant improvement of efficiency for intracenter silicon lasers followed by changes of lifetime for the upper and the lower laser levels due to moving the impurity levels either into or out of resonance with corresponding intervalley phonon frequencies.

Dokumentart:Konferenzbeitrag (Vortrag)
Zusätzliche Informationen:doi: 10.1557/PROC-1221-CC09-02
Titel:Stress-controlled phonon-impurity resonances in terahertz silicon lasers
Autoren:
AutorenInstitution oder E-Mail-Adresse der Autoren
Pavlov, S.G.sergeij.pavlov@dlr.de
Datum:2010
Erschienen in:Phonon Engineering for Enhanced Materials Solutions--Theory and Applications
Seitenbereich:
Name der Reihe:MRS Proceedings
Status:veröffentlicht
Stichwörter:THz, silicon, laser, uniaxially stressed
Veranstaltungstitel:Material Research Society Symposium
Veranstaltungsort:Boston, USA
Veranstaltungsart:internationale Konferenz
Veranstaltungsdatum:30. Nov.- 4. Dec. 2009
Veranstalter :Material Research Society
HGF - Forschungsbereich:Luftfahrt, Raumfahrt und Verkehr
HGF - Programm:Verkehr
HGF - Programmthema:Verkehrsmanagement
DLR - Schwerpunkt:Verkehr
DLR - Forschungsgebiet:V VM - Verkehrsmanagement
DLR - Teilgebiet (Projekt, Vorhaben):V - FAMOUS (alt)
Standort: Berlin-Adlershof
Institute & Einrichtungen:Institut für Planetenforschung > Terahertz- und Infrarotsensorik
Hinterlegt von: Dr. Sergey Pavlov
Hinterlegt am:04 Jan 2011 17:52
Letzte Änderung:12 Dez 2013 21:09

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