elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Contact | Deutsch
Fontsize: [-] Text [+]

Stimulated terahertz emission due to electronic Raman scattering in silicon

Pavlov, S.G. and Böttger, U. and Hovenier, J.N. and Abrosimov, N.V. and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. and Hübers, H.-W. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94, pp. 171112-1. American Institute of Physics. DOI: 10.1063/1.3119662.

[img] PDF - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
290kB

Official URL: http://link.aip.org/link/?APPLAB/94/171112/1

Abstract

Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) arsenic states. Optical thresholds of the Raman laser are similar to those observed for other silicon donor lasers. In addition intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A1)-2s transition.

Document Type:Article
Title:Stimulated terahertz emission due to electronic Raman scattering in silicon
Authors:
AuthorsInstitution or Email of Authors
Pavlov, S.G.UNSPECIFIED
Böttger, U.UNSPECIFIED
Hovenier, J.N.Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Abrosimov, N.V.Leibniz Institute of Crystal Growth, Berlin, Germany
Riemann, H.Leibniz Institute of Crystal Growth, Berlin, Germany
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Redlich, B.FOM Institute for Plasma Physics, Nieuwegein, The Netherlands
van der Meer, A.F.G.FOM Institute for Plasma Physics, Nieuwegein, The Netherlands
Hübers, H.-W.UNSPECIFIED
Date:2009
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
In Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:94
DOI:10.1063/1.3119662
Page Range:pp. 171112-1
Publisher:American Institute of Physics
Status:Published
Keywords:silicon Raman laser, terahertz laser
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:06 Jan 2010 21:10
Last Modified:12 Dec 2013 20:42

Repository Staff Only: item control page

Browse
Search
Help & Contact
Informationen
electronic library is running on EPrints 3.3.12
Copyright © 2008-2012 German Aerospace Center (DLR). All rights reserved.