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THz amplification based on impurity-and transitions in Si/GeSi heterostructures

Shastin, Valery and Zhukavin, Roman and Bekin, Nickolay and Tsyplenkov, Veniamin and Radamson, Henry and Pavlov, Sergey and Hübers, Heinz-Wilhelm (2008) THz amplification based on impurity-and transitions in Si/GeSi heterostructures. In: 4th International Conference on Advanced Optoelectronics and Lasers, pp. 422-424. CAOL 2008 (4. Annual Conference), [2008-09-29 - 2008-10-04], Alushta (Ukraine). ISBN 978-1-4244-1974-6.

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Abstract

Terahertz stimulated emission based on impurity-band optical transitions of phosphor donor centers embedded in Si/GeSi heterostructures is reported. THz emission was measured from selectively doped Si/GeSi structures excited by CO2 laser radiation. Amplification of 8-9 THz emission with the coefficient of 2-3 1/cm is obtained for structures with gently strained selectively doped Si layers (Nd ≈ 10^17 cm^-3) under pump density of 200 kW/cm2. Corresponding net gain taking into account small overlapping of active layer with THz mode is estimated to be ~ 200-300 1/cm. Experimental data demonstrate the possibility to use impurity-band transitions for THz laser action. The capability of Si/GeSi quantum cascade scheme which can support inverted population on donor-continuum transitions of Si conduction band is also analyzed.

Document Type:Conference or Workshop Item (Poster)
Title:THz amplification based on impurity-and transitions in Si/GeSi heterostructures
Authors:
AuthorsInstitution or Email of Authors
Shastin, ValeryInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Zhukavin, RomanInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Bekin, NickolayInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Tsyplenkov, VeniaminInstitute for Physics of Microstructures, RAS, N.Novgorod, Russia
Radamson, HenryRoyal Institute of Technology, Kista, Sweden
Pavlov, SergeyUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Date:September 2008
Journal or Publication Title:4th International Conference on Advanced Optoelectronics and Lasers
Refereed publication:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 422-424
ISBN:978-1-4244-1974-6
Status:Published
Keywords:THz, Si-based heterostructure
Event Title:CAOL 2008 (4. Annual Conference)
Event Location:Alushta (Ukraine)
Event Type:international Conference
Event Dates:[2008-09-29 - 2008-10-04]
Organizer:IEEE Lasers and Electro-Optics Society (LEOS)
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:25 Nov 2008
Last Modified:15 Jan 2010 00:21

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