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Using principal phonons in semiconductors for the generation of terahertz radiation

Pavlov, Sergey (2007) Using principal phonons in semiconductors for the generation of terahertz radiation. In: Material Research Society (MRS) Fall Meeting, Symposium EE: Phonon Engineering--Theory and Applications, p. 372178. MRS 2007 Fall Meeting, [2007-11-26 - 2007-11-30], Boston, MA (USA).

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Abstract

Electron-phonon interactions employing principal phonons of the lattice belong to the fastest processes in semiconductors. Over last decade this fundamental feature has been used for generation of population inversion in far-infrared (terahertz frequency range) semiconductor lasers. In these lasers ultrafast, (sub-)picosecond interactions with principal phonons compete with fast thermal phonons which tend to support relaxation towards equilibrium. A proper design of electronic resonances with phonons can enable an inversed electron distribution as well as resonant Raman scattering. Different laser schemes realized for the terahertz frequency range will be discussed with emphasis on elemental semiconductor lasers, such as p-germanium and n-silicon lasers. These approaches have demonstrated for the first time the potential of principle phonons for intersubband and intracenter laser mechanisms. Later on this was used in terahertz quantum cascade heterostructure lasers. The realization of the intracenter Raman silicon laser has shown the possibility of using different principle phonons in semiconductors for the generation of stimulated emission in the mid- and far-infrared wavelength range.

Document Type:Conference or Workshop Item (Speech)
Title:Using principal phonons in semiconductors for the generation of terahertz radiation
Authors:
AuthorsInstitution or Email of Authors
Pavlov, SergeyUNSPECIFIED
Date:November 2007
Journal or Publication Title:Material Research Society (MRS) Fall Meeting, Symposium EE: Phonon Engineering--Theory and Applications
Page Range:p. 372178
Status:Published
Keywords:semiconductor lasers, THz, phonons
Event Title:MRS 2007 Fall Meeting
Event Location:Boston, MA (USA)
Event Type:international Conference
Event Dates:[2007-11-26 - 2007-11-30]
Organizer:Material Research Society
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:05 Jan 2009
Last Modified:27 Apr 2009 15:25

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